Room temperature SiC wafer bonding using SAB methods

Fengwen Mu, Yinghui Wang, Kenichi Iguchi, Haruo Nakazawa, Tadatomo Suga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, wafer bonding of SiC accomplished at room temperature would be introduced. Homo/heterogeneous SiC bonding using three kinds of SAB methods (standard SAB, modified SAB with Si-containing Ar-beam, and modified SAB with Si sputtering layer) were investigated and compared. The related bonding mechanisms were analyzed. The results of this research demonstrated SAB is a promising method for the low temperature bonding of SiC.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
CountryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

Fingerprint

Wafer bonding
Temperature
Sputtering

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Mu, F., Wang, Y., Iguchi, K., Nakazawa, H., & Suga, T. (2019). Room temperature SiC wafer bonding using SAB methods. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 [8735211] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735211

Room temperature SiC wafer bonding using SAB methods. / Mu, Fengwen; Wang, Yinghui; Iguchi, Kenichi; Nakazawa, Haruo; Suga, Tadatomo.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8735211 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mu, F, Wang, Y, Iguchi, K, Nakazawa, H & Suga, T 2019, Room temperature SiC wafer bonding using SAB methods. in Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019., 8735211, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Institute of Electrical and Electronics Engineers Inc., 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Kanazawa, Ishikawa, Japan, 19/5/21. https://doi.org/10.23919/LTB-3D.2019.8735211
Mu F, Wang Y, Iguchi K, Nakazawa H, Suga T. Room temperature SiC wafer bonding using SAB methods. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8735211. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). https://doi.org/10.23919/LTB-3D.2019.8735211
Mu, Fengwen ; Wang, Yinghui ; Iguchi, Kenichi ; Nakazawa, Haruo ; Suga, Tadatomo. / Room temperature SiC wafer bonding using SAB methods. Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).
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