Room temperature wafer bonding of wide bandgap semiconductors

Fengwen Mu, Yinghui Wang, Tadatomo Suga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, wafer bonding of wide bandgap semiconductors of SiC and OaN were accomplished by different surface activated bonding (SAB) methods at room temperature. For SiC wafer bonding, room temperature SiC-SiC, SiC-Si and SiC-SiO 2 bonding by three kinds of SAB methods (standard SAB, Modified SAB with Si-containing Ar-beam, and Modified SAB with Si-sputtering layer) have been investigated and compared. For GaN wafer bonding, standard SAB was applied to the direct wafer bonding of GaN-Si at room temperature and modified SAB with Si-sputtering layer was employed for the bonding of GaN-diamond at room temperature. For both of the SiC bonding and GaN bonding, the bonding mechanisms were analyzed. The results of this research indicate SAB should be a promising method for the low temperature bonding of wide bandgap semiconductors.

Original languageEnglish
Title of host publicationECS Transactions
EditorsM. Goorsky, K.D. Hobart, F. Fournel, R. Knechtel, C.S. Tan, H. Baumgart, T. Suga
PublisherElectrochemical Society Inc.
Pages3-21
Number of pages19
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2018 Jan 1
Externally publishedYes
EventSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2018 Sep 302018 Oct 4

Publication series

NameECS Transactions
Number5
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period18/9/3018/10/4

Fingerprint

Wafer bonding
Energy gap
Semiconductor materials
Temperature
Sputtering

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mu, F., Wang, Y., & Suga, T. (2018). Room temperature wafer bonding of wide bandgap semiconductors. In M. Goorsky, K. D. Hobart, F. Fournel, R. Knechtel, C. S. Tan, H. Baumgart, & T. Suga (Eds.), ECS Transactions (5 ed., pp. 3-21). (ECS Transactions; Vol. 86, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/08605.0003ecst

Room temperature wafer bonding of wide bandgap semiconductors. / Mu, Fengwen; Wang, Yinghui; Suga, Tadatomo.

ECS Transactions. ed. / M. Goorsky; K.D. Hobart; F. Fournel; R. Knechtel; C.S. Tan; H. Baumgart; T. Suga. 5. ed. Electrochemical Society Inc., 2018. p. 3-21 (ECS Transactions; Vol. 86, No. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mu, F, Wang, Y & Suga, T 2018, Room temperature wafer bonding of wide bandgap semiconductors. in M Goorsky, KD Hobart, F Fournel, R Knechtel, CS Tan, H Baumgart & T Suga (eds), ECS Transactions. 5 edn, ECS Transactions, no. 5, vol. 86, Electrochemical Society Inc., pp. 3-21, Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 18/9/30. https://doi.org/10.1149/08605.0003ecst
Mu F, Wang Y, Suga T. Room temperature wafer bonding of wide bandgap semiconductors. In Goorsky M, Hobart KD, Fournel F, Knechtel R, Tan CS, Baumgart H, Suga T, editors, ECS Transactions. 5 ed. Electrochemical Society Inc. 2018. p. 3-21. (ECS Transactions; 5). https://doi.org/10.1149/08605.0003ecst
Mu, Fengwen ; Wang, Yinghui ; Suga, Tadatomo. / Room temperature wafer bonding of wide bandgap semiconductors. ECS Transactions. editor / M. Goorsky ; K.D. Hobart ; F. Fournel ; R. Knechtel ; C.S. Tan ; H. Baumgart ; T. Suga. 5. ed. Electrochemical Society Inc., 2018. pp. 3-21 (ECS Transactions; 5).
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