Rubrene single crystal field-effect transistor with epitaxial BaTiO 3 high- k gate insulator

Nobuya Hiroshiba, Ryotaro Kumashiro, Katsumi Tanigaki, Taishi Takenobu, Yoshihiro Iwasa, Kenta Kotani, Iwao Kawayama, Masayoshi Tonouchi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

High quality BaTi O3 thin-film epitaxially grown on a Nb-doped SrTi O3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high- k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTi O3 thin-film accumulates 0.1 holesrubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holesrubrene-molecule attained in the case of Si O2. This is the highest carrier number so far obtained in organic field-effect transistors (FETs). Other important parameters of rubrene single crystal FETs on BTO/Nb-STO are described in comparison with those on Si O2 /doped-Si.

Original languageEnglish
Article number152110
JournalApplied Physics Letters
Volume89
Issue number15
DOIs
Publication statusPublished - 2006
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hiroshiba, N., Kumashiro, R., Tanigaki, K., Takenobu, T., Iwasa, Y., Kotani, K., Kawayama, I., & Tonouchi, M. (2006). Rubrene single crystal field-effect transistor with epitaxial BaTiO 3 high- k gate insulator. Applied Physics Letters, 89(15), [152110]. https://doi.org/10.1063/1.2360207