Rubrene single crystal field-effect transistor with epitaxial BaTiO 3 high- k gate insulator

Nobuya Hiroshiba, Ryotaro Kumashiro, Katsumi Tanigaki, Taishi Takenobu, Yoshihiro Iwasa, Kenta Kotani, Iwao Kawayama, Masayoshi Tonouchi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

High quality BaTi O3 thin-film epitaxially grown on a Nb-doped SrTi O3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high- k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTi O3 thin-film accumulates 0.1 holesrubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holesrubrene-molecule attained in the case of Si O2. This is the highest carrier number so far obtained in organic field-effect transistors (FETs). Other important parameters of rubrene single crystal FETs on BTO/Nb-STO are described in comparison with those on Si O2 /doped-Si.

Original languageEnglish
Article number152110
JournalApplied Physics Letters
Volume89
Issue number15
DOIs
Publication statusPublished - 2006
Externally publishedYes

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crystal field theory
field effect transistors
insulators
single crystals
thin films
laser ablation
molecules
permittivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hiroshiba, N., Kumashiro, R., Tanigaki, K., Takenobu, T., Iwasa, Y., Kotani, K., ... Tonouchi, M. (2006). Rubrene single crystal field-effect transistor with epitaxial BaTiO 3 high- k gate insulator. Applied Physics Letters, 89(15), [152110]. https://doi.org/10.1063/1.2360207

Rubrene single crystal field-effect transistor with epitaxial BaTiO 3 high- k gate insulator. / Hiroshiba, Nobuya; Kumashiro, Ryotaro; Tanigaki, Katsumi; Takenobu, Taishi; Iwasa, Yoshihiro; Kotani, Kenta; Kawayama, Iwao; Tonouchi, Masayoshi.

In: Applied Physics Letters, Vol. 89, No. 15, 152110, 2006.

Research output: Contribution to journalArticle

Hiroshiba, N, Kumashiro, R, Tanigaki, K, Takenobu, T, Iwasa, Y, Kotani, K, Kawayama, I & Tonouchi, M 2006, 'Rubrene single crystal field-effect transistor with epitaxial BaTiO 3 high- k gate insulator', Applied Physics Letters, vol. 89, no. 15, 152110. https://doi.org/10.1063/1.2360207
Hiroshiba N, Kumashiro R, Tanigaki K, Takenobu T, Iwasa Y, Kotani K et al. Rubrene single crystal field-effect transistor with epitaxial BaTiO 3 high- k gate insulator. Applied Physics Letters. 2006;89(15). 152110. https://doi.org/10.1063/1.2360207
Hiroshiba, Nobuya ; Kumashiro, Ryotaro ; Tanigaki, Katsumi ; Takenobu, Taishi ; Iwasa, Yoshihiro ; Kotani, Kenta ; Kawayama, Iwao ; Tonouchi, Masayoshi. / Rubrene single crystal field-effect transistor with epitaxial BaTiO 3 high- k gate insulator. In: Applied Physics Letters. 2006 ; Vol. 89, No. 15.
@article{013f08a9213449639c61c7289310f8a2,
title = "Rubrene single crystal field-effect transistor with epitaxial BaTiO 3 high- k gate insulator",
abstract = "High quality BaTi O3 thin-film epitaxially grown on a Nb-doped SrTi O3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high- k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTi O3 thin-film accumulates 0.1 holesrubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holesrubrene-molecule attained in the case of Si O2. This is the highest carrier number so far obtained in organic field-effect transistors (FETs). Other important parameters of rubrene single crystal FETs on BTO/Nb-STO are described in comparison with those on Si O2 /doped-Si.",
author = "Nobuya Hiroshiba and Ryotaro Kumashiro and Katsumi Tanigaki and Taishi Takenobu and Yoshihiro Iwasa and Kenta Kotani and Iwao Kawayama and Masayoshi Tonouchi",
year = "2006",
doi = "10.1063/1.2360207",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Rubrene single crystal field-effect transistor with epitaxial BaTiO 3 high- k gate insulator

AU - Hiroshiba, Nobuya

AU - Kumashiro, Ryotaro

AU - Tanigaki, Katsumi

AU - Takenobu, Taishi

AU - Iwasa, Yoshihiro

AU - Kotani, Kenta

AU - Kawayama, Iwao

AU - Tonouchi, Masayoshi

PY - 2006

Y1 - 2006

N2 - High quality BaTi O3 thin-film epitaxially grown on a Nb-doped SrTi O3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high- k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTi O3 thin-film accumulates 0.1 holesrubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holesrubrene-molecule attained in the case of Si O2. This is the highest carrier number so far obtained in organic field-effect transistors (FETs). Other important parameters of rubrene single crystal FETs on BTO/Nb-STO are described in comparison with those on Si O2 /doped-Si.

AB - High quality BaTi O3 thin-film epitaxially grown on a Nb-doped SrTi O3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high- k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTi O3 thin-film accumulates 0.1 holesrubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holesrubrene-molecule attained in the case of Si O2. This is the highest carrier number so far obtained in organic field-effect transistors (FETs). Other important parameters of rubrene single crystal FETs on BTO/Nb-STO are described in comparison with those on Si O2 /doped-Si.

UR - http://www.scopus.com/inward/record.url?scp=33750020597&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750020597&partnerID=8YFLogxK

U2 - 10.1063/1.2360207

DO - 10.1063/1.2360207

M3 - Article

AN - SCOPUS:33750020597

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 152110

ER -