Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator

Nobuya Hiroshiba, Ryotaro Kumashiro, Taishi Takenobu, Naoya Komatsu, Yusuke Suto, Yoshihiro Iwasa, Kenta Kotani, Iwao Kawayama, Masayoshi Tonouchi, Katsumi Tanigaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages270-275
Number of pages6
Volume965
Publication statusPublished - 2006
Externally publishedYes
Event2006 MRS Fall Meeting - Boston, MA
Duration: 2006 Nov 272006 Dec 1

Other

Other2006 MRS Fall Meeting
CityBoston, MA
Period06/11/2706/12/1

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Hiroshiba, N., Kumashiro, R., Takenobu, T., Komatsu, N., Suto, Y., Iwasa, Y., Kotani, K., Kawayama, I., Tonouchi, M., & Tanigaki, K. (2006). Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator. In Materials Research Society Symposium Proceedings (Vol. 965, pp. 270-275)