Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator

Nobuya Hiroshiba, Ryotaro Kumashiro, Taishi Takenobu, Naoya Komatsu, Yusuke Suto, Yoshihiro Iwasa, Kenta Kotani, Iwao Kawayama, Masayoshi Tonouchi, Katsumi Tanigaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages270-275
Number of pages6
Volume965
Publication statusPublished - 2006
Externally publishedYes
Event2006 MRS Fall Meeting - Boston, MA
Duration: 2006 Nov 272006 Dec 1

Other

Other2006 MRS Fall Meeting
CityBoston, MA
Period06/11/2706/12/1

Fingerprint

Organic field effect transistors
Field effect transistors
Epitaxial growth
Single crystals
Thin films
Molecules
Lasers
Laser ablation
Permittivity
Substrates
rubrene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Hiroshiba, N., Kumashiro, R., Takenobu, T., Komatsu, N., Suto, Y., Iwasa, Y., ... Tanigaki, K. (2006). Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator. In Materials Research Society Symposium Proceedings (Vol. 965, pp. 270-275)

Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator. / Hiroshiba, Nobuya; Kumashiro, Ryotaro; Takenobu, Taishi; Komatsu, Naoya; Suto, Yusuke; Iwasa, Yoshihiro; Kotani, Kenta; Kawayama, Iwao; Tonouchi, Masayoshi; Tanigaki, Katsumi.

Materials Research Society Symposium Proceedings. Vol. 965 2006. p. 270-275.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hiroshiba, N, Kumashiro, R, Takenobu, T, Komatsu, N, Suto, Y, Iwasa, Y, Kotani, K, Kawayama, I, Tonouchi, M & Tanigaki, K 2006, Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator. in Materials Research Society Symposium Proceedings. vol. 965, pp. 270-275, 2006 MRS Fall Meeting, Boston, MA, 06/11/27.
Hiroshiba N, Kumashiro R, Takenobu T, Komatsu N, Suto Y, Iwasa Y et al. Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator. In Materials Research Society Symposium Proceedings. Vol. 965. 2006. p. 270-275
Hiroshiba, Nobuya ; Kumashiro, Ryotaro ; Takenobu, Taishi ; Komatsu, Naoya ; Suto, Yusuke ; Iwasa, Yoshihiro ; Kotani, Kenta ; Kawayama, Iwao ; Tonouchi, Masayoshi ; Tanigaki, Katsumi. / Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator. Materials Research Society Symposium Proceedings. Vol. 965 2006. pp. 270-275
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AU - Kumashiro, Ryotaro

AU - Takenobu, Taishi

AU - Komatsu, Naoya

AU - Suto, Yusuke

AU - Iwasa, Yoshihiro

AU - Kotani, Kenta

AU - Kawayama, Iwao

AU - Tonouchi, Masayoshi

AU - Tanigaki, Katsumi

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AB - High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

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