Abstract
The scalability of overlap LDD (OL-LDD) and single drain (SD) CMOSFETs is examined with respect to the allowable operating voltage (VDmax) relevant to hot carrier reliability, time-dependent dielectric breakdown (TDDB) reliability, and short channel effects. VDmax is almost independent of the gate oxide thickness. This is because the smaller degradation with thinner gate oxide is counter-balanced with a larger Isub. It is shown that OL-LDD with tox = 7 approximately 9 nm can be operated with 3.3 V. It is concluded that the performance of CMOS devices with OL-LDD is superior to that with SD for LG down to 0.25 μm.
| Original language | English |
|---|---|
| Pages (from-to) | 47-48 |
| Number of pages | 2 |
| Journal | Digest of Technical Papers - Symposium on VLSI Technology |
| Publication status | Published - 1991 Dec 1 |
| Event | 1991 Symposium on VLSI Technology - Oiso, Jpn Duration: 1991 May 28 → 1991 May 30 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Shimizu, M., Inuishi, M., Tsukamoto, K., & Akasaka, Y. (1991). Scalability and operating voltage of gate/N- overlap LDD in sub-half-micron regime. Digest of Technical Papers - Symposium on VLSI Technology, 47-48.