Scalability and operating voltage of gate/N- overlap LDD in sub-half-micron regime

M. Shimizu; M. Inuishi; K. Tsukamoto; Y. Akasaka

Scalability and operating voltage of gate/N^- overlap LDD in sub-half-micron regime

M. Shimizu, M. Inuishi, K. Tsukamoto, Y. Akasaka

Research output: Contribution to journal › Conference article › peer-review

Abstract

The scalability of overlap LDD (OL-LDD) and single drain (SD) CMOSFETs is examined with respect to the allowable operating voltage (V_Dmax) relevant to hot carrier reliability, time-dependent dielectric breakdown (TDDB) reliability, and short channel effects. V_Dmax is almost independent of the gate oxide thickness. This is because the smaller degradation with thinner gate oxide is counter-balanced with a larger I_sub. It is shown that OL-LDD with t_ox = 7 approximately 9 nm can be operated with 3.3 V. It is concluded that the performance of CMOS devices with OL-LDD is superior to that with SD for L_G down to 0.25 μm.

Original language	English
Pages (from-to)	47-48
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 1991 Dec 1
Externally published	Yes
Event	1991 Symposium on VLSI Technology - Oiso, Jpn Duration: 1991 May 28 → 1991 May 30

ASJC Scopus subject areas

Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Scalability and operating voltage of gate/N<sup>-</sup> overlap LDD in sub-half-micron regime'. Together they form a unique fingerprint.

Cite this

@article{c99b09f62aac46659b8c6f8f06cf44b0,

title = "Scalability and operating voltage of gate/N- overlap LDD in sub-half-micron regime",

abstract = "The scalability of overlap LDD (OL-LDD) and single drain (SD) CMOSFETs is examined with respect to the allowable operating voltage (VDmax) relevant to hot carrier reliability, time-dependent dielectric breakdown (TDDB) reliability, and short channel effects. VDmax is almost independent of the gate oxide thickness. This is because the smaller degradation with thinner gate oxide is counter-balanced with a larger Isub. It is shown that OL-LDD with tox = 7 approximately 9 nm can be operated with 3.3 V. It is concluded that the performance of CMOS devices with OL-LDD is superior to that with SD for LG down to 0.25 μm.",

author = "M. Shimizu and M. Inuishi and K. Tsukamoto and Y. Akasaka",

year = "1991",

month = dec,

day = "1",

language = "English",

pages = "47--48",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1991 Symposium on VLSI Technology ; Conference date: 28-05-1991 Through 30-05-1991",

}

TY - JOUR

T1 - Scalability and operating voltage of gate/N- overlap LDD in sub-half-micron regime

AU - Shimizu, M.

AU - Inuishi, M.

AU - Tsukamoto, K.

AU - Akasaka, Y.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - The scalability of overlap LDD (OL-LDD) and single drain (SD) CMOSFETs is examined with respect to the allowable operating voltage (VDmax) relevant to hot carrier reliability, time-dependent dielectric breakdown (TDDB) reliability, and short channel effects. VDmax is almost independent of the gate oxide thickness. This is because the smaller degradation with thinner gate oxide is counter-balanced with a larger Isub. It is shown that OL-LDD with tox = 7 approximately 9 nm can be operated with 3.3 V. It is concluded that the performance of CMOS devices with OL-LDD is superior to that with SD for LG down to 0.25 μm.

AB - The scalability of overlap LDD (OL-LDD) and single drain (SD) CMOSFETs is examined with respect to the allowable operating voltage (VDmax) relevant to hot carrier reliability, time-dependent dielectric breakdown (TDDB) reliability, and short channel effects. VDmax is almost independent of the gate oxide thickness. This is because the smaller degradation with thinner gate oxide is counter-balanced with a larger Isub. It is shown that OL-LDD with tox = 7 approximately 9 nm can be operated with 3.3 V. It is concluded that the performance of CMOS devices with OL-LDD is superior to that with SD for LG down to 0.25 μm.

UR - http://www.scopus.com/inward/record.url?scp=0026399914&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026399914&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0026399914

SP - 47

EP - 48

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

T2 - 1991 Symposium on VLSI Technology

Y2 - 28 May 1991 through 30 May 1991

ER -

Scalability and operating voltage of gate/N- overlap LDD in sub-half-micron regime

Abstract

ASJC Scopus subject areas

Other files and links

Cite this

Scalability and operating voltage of gate/N^- overlap LDD in sub-half-micron regime