The scalability of overlap LDD (OL-LDD) and single drain (SD) CMOSFETs is examined with respect to the allowable operating voltage (VDmax) relevant to hot carrier reliability, time-dependent dielectric breakdown (TDDB) reliability, and short channel effects. VDmax is almost independent of the gate oxide thickness. This is because the smaller degradation with thinner gate oxide is counter-balanced with a larger Isub. It is shown that OL-LDD with tox = 7 approximately 9 nm can be operated with 3.3 V. It is concluded that the performance of CMOS devices with OL-LDD is superior to that with SD for LG down to 0.25 μm.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1991 Dec 1|
|Event||1991 Symposium on VLSI Technology - Oiso, Jpn|
Duration: 1991 May 28 → 1991 May 30
ASJC Scopus subject areas
- Electrical and Electronic Engineering