Abstract
The scalability of overlap LDD (OL-LDD) and single drain (SD) CMOSFETs is examined with respect to the allowable operating voltage (VDmax) relevant to hot carrier reliability, time-dependent dielectric breakdown (TDDB) reliability, and short channel effects. VDmax is almost independent of the gate oxide thickness. This is because the smaller degradation with thinner gate oxide is counter-balanced with a larger Isub. It is shown that OL-LDD with tox = 7 approximately 9 nm can be operated with 3.3 V. It is concluded that the performance of CMOS devices with OL-LDD is superior to that with SD for LG down to 0.25 μm.
Original language | English |
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Pages (from-to) | 47-48 |
Number of pages | 2 |
Journal | Digest of Technical Papers - Symposium on VLSI Technology |
Publication status | Published - 1991 Dec 1 |
Externally published | Yes |
Event | 1991 Symposium on VLSI Technology - Oiso, Jpn Duration: 1991 May 28 → 1991 May 30 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering