Abstract
We propose the model of junction leakage current of local cells. Our model can well explain voltage, temperature dependence and distribution of the leakage current. This model indicates that interface state is considered to control the leakage current and retention time. Based on our model, we found that decreasing the trap density and the electric field are effective for decreasing the leakage current. Moreover, a guideline of trap density, storage capacitance and electric field is proposed for designing future DRAMs to maintain the retention time.
| Original language | English |
|---|---|
| Pages (from-to) | 84-85 |
| Number of pages | 2 |
| Journal | Unknown Journal |
| Publication status | Published - 2000 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Scaling guideline of DRAM memory cells for maintaining the retention time. / Ueno, Shuichi; Inoue, Yasuo; Inuishi, Masahide.
In: Unknown Journal, 2000, p. 84-85.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Scaling guideline of DRAM memory cells for maintaining the retention time
AU - Ueno, Shuichi
AU - Inoue, Yasuo
AU - Inuishi, Masahide
PY - 2000
Y1 - 2000
N2 - We propose the model of junction leakage current of local cells. Our model can well explain voltage, temperature dependence and distribution of the leakage current. This model indicates that interface state is considered to control the leakage current and retention time. Based on our model, we found that decreasing the trap density and the electric field are effective for decreasing the leakage current. Moreover, a guideline of trap density, storage capacitance and electric field is proposed for designing future DRAMs to maintain the retention time.
AB - We propose the model of junction leakage current of local cells. Our model can well explain voltage, temperature dependence and distribution of the leakage current. This model indicates that interface state is considered to control the leakage current and retention time. Based on our model, we found that decreasing the trap density and the electric field are effective for decreasing the leakage current. Moreover, a guideline of trap density, storage capacitance and electric field is proposed for designing future DRAMs to maintain the retention time.
UR - http://www.scopus.com/inward/record.url?scp=0033701272&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033701272&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033701272
SP - 84
EP - 85
JO - Nuclear Physics A
JF - Nuclear Physics A
SN - 0375-9474
ER -