ScAlN polarization inverted resonators and enhancement of kt2 in new YbAlN materials for BAW devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

AlN thin piezoelectric films are attractive for RF filter applications because of their low mechanical loss 1/Qm. We here introduce new AlN based materials: polarization inverted ScAlN multilayer and YbAlN films. Enhancement of electromechanical coupling coefficient in YbAlN were theoretically and experimentally demonstrated. These materials are promising for application in BAW and SAW devices.

Original languageEnglish
Title of host publication2019 IEEE International Ultrasonics Symposium, IUS 2019
PublisherIEEE Computer Society
Pages894-899
Number of pages6
ISBN (Electronic)9781728145969
DOIs
Publication statusPublished - 2019 Oct
Event2019 IEEE International Ultrasonics Symposium, IUS 2019 - Glasgow, United Kingdom
Duration: 2019 Oct 62019 Oct 9

Publication series

NameIEEE International Ultrasonics Symposium, IUS
Volume2019-October
ISSN (Print)1948-5719
ISSN (Electronic)1948-5727

Conference

Conference2019 IEEE International Ultrasonics Symposium, IUS 2019
Country/TerritoryUnited Kingdom
CityGlasgow
Period19/10/619/10/9

Keywords

  • AlN
  • BAW resonators
  • Polarization inverted layer
  • ScAlN
  • YbAlN

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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