Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

Abstract

Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.

Original languageEnglish
Pages (from-to)1811
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

scanning tunneling microscopy
nitrogen
grooves
passivity
tunnels
vacuum chambers
threshold currents
ultrahigh vacuum
filaments
tungsten
gases

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale. / Kasu, Makoto; Makimoto, Toshiki; Kobayashi, Naoki.

In: Applied Physics Letters, 1995, p. 1811.

Research output: Contribution to journalArticle

@article{22889ba02d9b43fb9a3e1f102d9bce4f,
title = "Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale",
abstract = "Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.",
author = "Makoto Kasu and Toshiki Makimoto and Naoki Kobayashi",
year = "1995",
language = "English",
pages = "1811",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

AU - Kasu, Makoto

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 1995

Y1 - 1995

N2 - Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.

AB - Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.

UR - http://www.scopus.com/inward/record.url?scp=36449005980&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449005980&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:36449005980

SP - 1811

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -