Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

Makoto Kasu; Toshiki Makimoto; Naoki Kobayashi

doi:10.1063/1.116021

Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.

Original language	English
Pages (from-to)	1811-1813
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	13
DOIs	https://doi.org/10.1063/1.116021
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.116021

Cite this

@article{37d3e998adc445fc834475a3675ef62f,

title = "Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale",

abstract = "Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.",

author = "Makoto Kasu and Toshiki Makimoto and Naoki Kobayashi",

year = "1996",

doi = "10.1063/1.116021",

language = "English",

volume = "68",

pages = "1811--1813",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

AU - Kasu, Makoto

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 1996

Y1 - 1996

N2 - Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.

AB - Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.

UR - http://www.scopus.com/inward/record.url?scp=0039114221&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0039114221&partnerID=8YFLogxK

U2 - 10.1063/1.116021

DO - 10.1063/1.116021

M3 - Article

AN - SCOPUS:0039114221

VL - 68

SP - 1811

EP - 1813

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -

Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this