Abstract
Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.
Original language | English |
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Pages (from-to) | 1811-1813 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 68 |
Issue number | 13 |
DOIs | |
Publication status | Published - 1996 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)