Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

Makoto Kasu; Toshiki Makimoto; Naoki Kobayashi

doi:10.1063/1.116021

Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

Makoto Kasu^*, Toshiki Makimoto, Naoki Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.

Original language	English
Pages (from-to)	1811-1813
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	13
DOIs	https://doi.org/10.1063/1.116021
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.116021

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title = "Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale",

abstract = "Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.",

author = "Makoto Kasu and Toshiki Makimoto and Naoki Kobayashi",

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doi = "10.1063/1.116021",

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T1 - Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

AU - Kasu, Makoto

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 1996

Y1 - 1996

N2 - Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.

AB - Using scanning tunneling microscopy (STM), we perform nanometer-scale modifications on nitrogen (N)-passivated GaAs (001) surfaces. After the surface is passivated with nitrogen gas through a heated tungsten filament in an ultrahigh-vacuum chamber, STM modification is performed by increasing the tunnel current. A 200×200 nm2 square groove was successfully fabricated. The smallest grooves are 0.5 nm deep and 5 nm wide when sample bias is -3 V and tunnel current is 5 nA. The threshold current for modification is 5 nA for surfaces with N passivation, but more than 50 nA for surfaces without N passivation.

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Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale

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