Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the interface of the metal/hydrogen-terminated diamond is theoretically modeled including the carrier density of the surface conductive layer and the electron-affinity variation from the clean surface of the hydrogen-terminated diamond. Based on the model, a relation among the carrier density, the electron affinity variation, and the barrier heights are derived. The relation explains well experimental results of and other than the present work.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2010 Jan 8|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics