Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond

K. Tsugawa, H. Noda, K. Hirose, H. Kawarada

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the interface of the metal/hydrogen-terminated diamond is theoretically modeled including the carrier density of the surface conductive layer and the electron-affinity variation from the clean surface of the hydrogen-terminated diamond. Based on the model, a relation among the carrier density, the electron affinity variation, and the barrier heights are derived. The relation explains well experimental results of and other than the present work.

Original languageEnglish
Article number045303
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number4
DOIs
Publication statusPublished - 2010 Jan 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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