Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond

K. Tsugawa, H. Noda, K. Hirose, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    21 Citations (Scopus)

    Abstract

    Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the interface of the metal/hydrogen-terminated diamond is theoretically modeled including the carrier density of the surface conductive layer and the electron-affinity variation from the clean surface of the hydrogen-terminated diamond. Based on the model, a relation among the carrier density, the electron affinity variation, and the barrier heights are derived. The relation explains well experimental results of and other than the present work.

    Original languageEnglish
    Article number045303
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume81
    Issue number4
    DOIs
    Publication statusPublished - 2010 Jan 8

    Fingerprint

    negative electron affinity
    Electron affinity
    Diamond
    Carrier concentration
    Hydrogen
    Diamonds
    diamonds
    electron affinity
    hydrogen
    Metals
    Current voltage characteristics
    metals
    electric contacts
    trends
    temperature dependence
    electric potential
    Temperature

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond. / Tsugawa, K.; Noda, H.; Hirose, K.; Kawarada, Hiroshi.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 4, 045303, 08.01.2010.

    Research output: Contribution to journalArticle

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    AB - Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the interface of the metal/hydrogen-terminated diamond is theoretically modeled including the carrier density of the surface conductive layer and the electron-affinity variation from the clean surface of the hydrogen-terminated diamond. Based on the model, a relation among the carrier density, the electron affinity variation, and the barrier heights are derived. The relation explains well experimental results of and other than the present work.

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