Schottky barrier heights of Au, Pd and Ni on n-GaN evaluated using mesa-structure diodes

T. Makimoto*, M. Kashiwa, T. Kido, N. Matsumoto, K. Kumakura, N. Kobayashi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


We investigated the Schottky characteristics of Au, Pd and Ni on n-GaN using capacitance-voltage and current-voltage measurements for mesa-structure diodes. Even though these metals have a similar metal work function of around 5.1 eV, their Schottky barrier heights are considerably different each other. The obtained Schottky barrier heights are 0.96, 1.50 and 1.34 eV for Au, Pd and Ni, respectively. The high Schottky barrier height for Pd is preferable for the gate metal in a field effect transistor and the ohmic metal for p-type nitride semiconductor. Although the work function difference between Au and Pd is just 0.02 eV, the barrier height difference is as high as 0.54 eV, meaning that the interfacial reaction between these metals and GaN or the Fermi-level pinning mechanism is quite different.

Original languageEnglish
Pages (from-to)2393-2395
Number of pages3
JournalPhysica Status Solidi C: Conferences
Issue number7
Publication statusPublished - 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

ASJC Scopus subject areas

  • Condensed Matter Physics


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