SCHOTTKY CHARACTERISTICS AND INTERFACIAL DEFECTS IN TUNGSTEN SILICIDE/GaAs AND PALLADIUM/GaAs SYSTEMS.

Toshiki Makimoto, M. Taniguchi, K. Ogiwara, T. Ikoma, T. Okumura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Schottky characteristics and interfacial defects were investigated in WSi/GaAs and Pd/GaAs systems. In as-deposited WSi/GaAS systems, no EL2 signal was found but a new sputtering-induced defect (ED5) was detected near the interface. After annealing, EL2 appeared and ED5 disappeared. The disappearance of ED5 was correlated with improvement of the ideality factor. In Pd/GaAS systems, change of EL2 density and the broadening of EL2 spectrum is noticeable as compared with the Au/GaAs system. The authors propose a hypothetical model, that reaction of Pd with GaAs may extract excess arsenic atoms near the interface and reduce the concentration of EL2.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
Place of PublicationTokyo, Jpn
PublisherBusiness Cent for Academic Soc Japan
Pages189-192
Number of pages4
ISBN (Print)4930813077
Publication statusPublished - 1984
Externally publishedYes

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Tungsten
Defects
Arsenic
Sputtering
Annealing
Atoms

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Makimoto, T., Taniguchi, M., Ogiwara, K., Ikoma, T., & Okumura, T. (1984). SCHOTTKY CHARACTERISTICS AND INTERFACIAL DEFECTS IN TUNGSTEN SILICIDE/GaAs AND PALLADIUM/GaAs SYSTEMS. In Conference on Solid State Devices and Materials (pp. 189-192). Tokyo, Jpn: Business Cent for Academic Soc Japan.

SCHOTTKY CHARACTERISTICS AND INTERFACIAL DEFECTS IN TUNGSTEN SILICIDE/GaAs AND PALLADIUM/GaAs SYSTEMS. / Makimoto, Toshiki; Taniguchi, M.; Ogiwara, K.; Ikoma, T.; Okumura, T.

Conference on Solid State Devices and Materials. Tokyo, Jpn : Business Cent for Academic Soc Japan, 1984. p. 189-192.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Makimoto, T, Taniguchi, M, Ogiwara, K, Ikoma, T & Okumura, T 1984, SCHOTTKY CHARACTERISTICS AND INTERFACIAL DEFECTS IN TUNGSTEN SILICIDE/GaAs AND PALLADIUM/GaAs SYSTEMS. in Conference on Solid State Devices and Materials. Business Cent for Academic Soc Japan, Tokyo, Jpn, pp. 189-192.
Makimoto T, Taniguchi M, Ogiwara K, Ikoma T, Okumura T. SCHOTTKY CHARACTERISTICS AND INTERFACIAL DEFECTS IN TUNGSTEN SILICIDE/GaAs AND PALLADIUM/GaAs SYSTEMS. In Conference on Solid State Devices and Materials. Tokyo, Jpn: Business Cent for Academic Soc Japan. 1984. p. 189-192
Makimoto, Toshiki ; Taniguchi, M. ; Ogiwara, K. ; Ikoma, T. ; Okumura, T. / SCHOTTKY CHARACTERISTICS AND INTERFACIAL DEFECTS IN TUNGSTEN SILICIDE/GaAs AND PALLADIUM/GaAs SYSTEMS. Conference on Solid State Devices and Materials. Tokyo, Jpn : Business Cent for Academic Soc Japan, 1984. pp. 189-192
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abstract = "Schottky characteristics and interfacial defects were investigated in WSi/GaAs and Pd/GaAs systems. In as-deposited WSi/GaAS systems, no EL2 signal was found but a new sputtering-induced defect (ED5) was detected near the interface. After annealing, EL2 appeared and ED5 disappeared. The disappearance of ED5 was correlated with improvement of the ideality factor. In Pd/GaAS systems, change of EL2 density and the broadening of EL2 spectrum is noticeable as compared with the Au/GaAs system. The authors propose a hypothetical model, that reaction of Pd with GaAs may extract excess arsenic atoms near the interface and reduce the concentration of EL2.",
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AB - Schottky characteristics and interfacial defects were investigated in WSi/GaAs and Pd/GaAs systems. In as-deposited WSi/GaAS systems, no EL2 signal was found but a new sputtering-induced defect (ED5) was detected near the interface. After annealing, EL2 appeared and ED5 disappeared. The disappearance of ED5 was correlated with improvement of the ideality factor. In Pd/GaAS systems, change of EL2 density and the broadening of EL2 spectrum is noticeable as compared with the Au/GaAs system. The authors propose a hypothetical model, that reaction of Pd with GaAs may extract excess arsenic atoms near the interface and reduce the concentration of EL2.

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