SCHOTTKY CHARACTERISTICS AND INTERFACIAL DEFECTS IN TUNGSTEN SILICIDE/GaAs AND PALLADIUM/GaAs SYSTEMS.

T. Makimoto, M. Taniguchi, K. Ogiwara, T. Ikoma, T. Okumura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Schottky characteristics and interfacial defects were investigated in WSi/GaAs and Pd/GaAs systems. In as-deposited WSi/GaAS systems, no EL2 signal was found but a new sputtering-induced defect (ED5) was detected near the interface. After annealing, EL2 appeared and ED5 disappeared. The disappearance of ED5 was correlated with improvement of the ideality factor. In Pd/GaAS systems, change of EL2 density and the broadening of EL2 spectrum is noticeable as compared with the Au/GaAs system. The authors propose a hypothetical model, that reaction of Pd with GaAs may extract excess arsenic atoms near the interface and reduce the concentration of EL2.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherBusiness Cent for Academic Soc Japan
Pages189-192
Number of pages4
ISBN (Print)4930813077
Publication statusPublished - 1984 Dec 1

Publication series

NameConference on Solid State Devices and Materials

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Makimoto, T., Taniguchi, M., Ogiwara, K., Ikoma, T., & Okumura, T. (1984). SCHOTTKY CHARACTERISTICS AND INTERFACIAL DEFECTS IN TUNGSTEN SILICIDE/GaAs AND PALLADIUM/GaAs SYSTEMS. In Conference on Solid State Devices and Materials (pp. 189-192). (Conference on Solid State Devices and Materials). Business Cent for Academic Soc Japan.