Schottky junctions based on vacuum evaporated films of thiophene oligomers

D. Fichou*, G. Horowitz, Yoshinori Nishikitani, J. Roncali, F. Garnier

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)


α-sexithienyl (α-6T) was synthesized and deposited as thin films onto platinized glass slides by the technique of vacuum evaporation. Metal-semiconductor (MS) junctions were then realized by evaporating small dots of Ag and Au. On the asformed film, Au gives an ohmic contact, and Ag a rectifying barrier. It is then concluded that α-6T behaves as a p-type semiconductor. After annealing at 150°C, rectifying barriers are obtained on both Au and Ag contacts, and α-6T turns to an n-type semiconductor. Changes in the respective UV-visible absorption may help in understanding the change from p- to n-type doping. A rough estimate of the band position of α-6T was obtained from the current-voltage and capacitance-voltage measurements on the MS diodes.

Original languageEnglish
Pages (from-to)729-734
Number of pages6
JournalSynthetic Metals
Issue number1-2
Publication statusPublished - 1989 Jan 30
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Polymers and Plastics


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