Schottky junctions based on vacuum evaporated films of thiophene oligomers

D. Fichou; G. Horowitz; Yoshinori Nishikitani; J. Roncali; F. Garnier

doi:10.1016/0379-6779(89)90597-3

Schottky junctions based on vacuum evaporated films of thiophene oligomers

D. Fichou^*, G. Horowitz, Yoshinori Nishikitani, J. Roncali, F. Garnier

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

α-sexithienyl (α-6T) was synthesized and deposited as thin films onto platinized glass slides by the technique of vacuum evaporation. Metal-semiconductor (MS) junctions were then realized by evaporating small dots of Ag and Au. On the asformed film, Au gives an ohmic contact, and Ag a rectifying barrier. It is then concluded that α-6T behaves as a p-type semiconductor. After annealing at 150°C, rectifying barriers are obtained on both Au and Ag contacts, and α-6T turns to an n-type semiconductor. Changes in the respective UV-visible absorption may help in understanding the change from p- to n-type doping. A rough estimate of the band position of α-6T was obtained from the current-voltage and capacitance-voltage measurements on the MS diodes.

Original language	English
Pages (from-to)	729-734
Number of pages	6
Journal	Synthetic Metals
Volume	28
Issue number	1-2
DOIs	https://doi.org/10.1016/0379-6779(89)90597-3
Publication status	Published - 1989 Jan 30
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Polymers and Plastics

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Cite this

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title = "Schottky junctions based on vacuum evaporated films of thiophene oligomers",

abstract = "α-sexithienyl (α-6T) was synthesized and deposited as thin films onto platinized glass slides by the technique of vacuum evaporation. Metal-semiconductor (MS) junctions were then realized by evaporating small dots of Ag and Au. On the asformed film, Au gives an ohmic contact, and Ag a rectifying barrier. It is then concluded that α-6T behaves as a p-type semiconductor. After annealing at 150°C, rectifying barriers are obtained on both Au and Ag contacts, and α-6T turns to an n-type semiconductor. Changes in the respective UV-visible absorption may help in understanding the change from p- to n-type doping. A rough estimate of the band position of α-6T was obtained from the current-voltage and capacitance-voltage measurements on the MS diodes.",

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T1 - Schottky junctions based on vacuum evaporated films of thiophene oligomers

AU - Fichou, D.

AU - Horowitz, G.

AU - Nishikitani, Yoshinori

AU - Roncali, J.

AU - Garnier, F.

PY - 1989/1/30

Y1 - 1989/1/30

N2 - α-sexithienyl (α-6T) was synthesized and deposited as thin films onto platinized glass slides by the technique of vacuum evaporation. Metal-semiconductor (MS) junctions were then realized by evaporating small dots of Ag and Au. On the asformed film, Au gives an ohmic contact, and Ag a rectifying barrier. It is then concluded that α-6T behaves as a p-type semiconductor. After annealing at 150°C, rectifying barriers are obtained on both Au and Ag contacts, and α-6T turns to an n-type semiconductor. Changes in the respective UV-visible absorption may help in understanding the change from p- to n-type doping. A rough estimate of the band position of α-6T was obtained from the current-voltage and capacitance-voltage measurements on the MS diodes.

AB - α-sexithienyl (α-6T) was synthesized and deposited as thin films onto platinized glass slides by the technique of vacuum evaporation. Metal-semiconductor (MS) junctions were then realized by evaporating small dots of Ag and Au. On the asformed film, Au gives an ohmic contact, and Ag a rectifying barrier. It is then concluded that α-6T behaves as a p-type semiconductor. After annealing at 150°C, rectifying barriers are obtained on both Au and Ag contacts, and α-6T turns to an n-type semiconductor. Changes in the respective UV-visible absorption may help in understanding the change from p- to n-type doping. A rough estimate of the band position of α-6T was obtained from the current-voltage and capacitance-voltage measurements on the MS diodes.

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Schottky junctions based on vacuum evaporated films of thiophene oligomers

Abstract

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