Abstract
We have re-examined the second-order Raman spectra in a thick AlAs layer grown on a GaAs substrate by polarized Raman spectroscopy. So as to reproduce the spectra, the force constants have been refined and then the phonon dispersion has been calculated within a modified version of the adiabatic bond-charge model. We present phonon frequencies at critical points, e.g. Γ, X, L and W, and the force constants for AlAs. The phonon dispersion is compared with a previous ab initio result and it is shown that the procedure presented herein is useful. A brief discussion is also given of the analysis of the second-order Raman spectra of AlSb.
| Original language | English |
|---|---|
| Pages (from-to) | 1949-1957 |
| Number of pages | 9 |
| Journal | Journal of Physics Condensed Matter |
| Volume | 7 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1995 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
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Second-order Raman spectra and lattice dynamics in AlAs. / Azuhata, T.; Sota, Takayuki; Suzuki, K.
In: Journal of Physics Condensed Matter, Vol. 7, No. 9, 1995, p. 1949-1957.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Second-order Raman spectra and lattice dynamics in AlAs
AU - Azuhata, T.
AU - Sota, Takayuki
AU - Suzuki, K.
PY - 1995
Y1 - 1995
N2 - We have re-examined the second-order Raman spectra in a thick AlAs layer grown on a GaAs substrate by polarized Raman spectroscopy. So as to reproduce the spectra, the force constants have been refined and then the phonon dispersion has been calculated within a modified version of the adiabatic bond-charge model. We present phonon frequencies at critical points, e.g. Γ, X, L and W, and the force constants for AlAs. The phonon dispersion is compared with a previous ab initio result and it is shown that the procedure presented herein is useful. A brief discussion is also given of the analysis of the second-order Raman spectra of AlSb.
AB - We have re-examined the second-order Raman spectra in a thick AlAs layer grown on a GaAs substrate by polarized Raman spectroscopy. So as to reproduce the spectra, the force constants have been refined and then the phonon dispersion has been calculated within a modified version of the adiabatic bond-charge model. We present phonon frequencies at critical points, e.g. Γ, X, L and W, and the force constants for AlAs. The phonon dispersion is compared with a previous ab initio result and it is shown that the procedure presented herein is useful. A brief discussion is also given of the analysis of the second-order Raman spectra of AlSb.
UR - http://www.scopus.com/inward/record.url?scp=0029251526&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029251526&partnerID=8YFLogxK
U2 - 10.1088/0953-8984/7/9/018
DO - 10.1088/0953-8984/7/9/018
M3 - Article
VL - 7
SP - 1949
EP - 1957
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 9
ER -