Abstract
We have re-examined the second-order Raman spectra in a thick AlAs layer grown on a GaAs substrate by polarized Raman spectroscopy. So as to reproduce the spectra, the force constants have been refined and then the phonon dispersion has been calculated within a modified version of the adiabatic bond-charge model. We present phonon frequencies at critical points, e.g. Gamma , X, L and W, and the force constants for AlAs. The phonon dispersion is compared with a previous ab initio result and it is shown that the procedure presented herein is useful. A brief discussion is also given of the analysis of the second-order Raman spectra of AlSb.
| Original language | English |
|---|---|
| Article number | 018 |
| Pages (from-to) | 1949-1957 |
| Number of pages | 9 |
| Journal | Journal of Physics: Condensed Matter |
| Volume | 7 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1995 Dec 1 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics