Second-order Raman spectra and lattice dynamics in AlAs

T. Azuhata, Takayuki Sota, K. Suzuki

    Research output: Contribution to journalArticle

    21 Citations (Scopus)

    Abstract

    We have re-examined the second-order Raman spectra in a thick AlAs layer grown on a GaAs substrate by polarized Raman spectroscopy. So as to reproduce the spectra, the force constants have been refined and then the phonon dispersion has been calculated within a modified version of the adiabatic bond-charge model. We present phonon frequencies at critical points, e.g. Γ, X, L and W, and the force constants for AlAs. The phonon dispersion is compared with a previous ab initio result and it is shown that the procedure presented herein is useful. A brief discussion is also given of the analysis of the second-order Raman spectra of AlSb.

    Original languageEnglish
    Pages (from-to)1949-1957
    Number of pages9
    JournalJournal of Physics Condensed Matter
    Volume7
    Issue number9
    DOIs
    Publication statusPublished - 1995

    Fingerprint

    Lattice vibrations
    Raman scattering
    Raman spectra
    Raman spectroscopy
    critical point
    Substrates
    gallium arsenide

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Second-order Raman spectra and lattice dynamics in AlAs. / Azuhata, T.; Sota, Takayuki; Suzuki, K.

    In: Journal of Physics Condensed Matter, Vol. 7, No. 9, 1995, p. 1949-1957.

    Research output: Contribution to journalArticle

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    AU - Sota, Takayuki

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    AB - We have re-examined the second-order Raman spectra in a thick AlAs layer grown on a GaAs substrate by polarized Raman spectroscopy. So as to reproduce the spectra, the force constants have been refined and then the phonon dispersion has been calculated within a modified version of the adiabatic bond-charge model. We present phonon frequencies at critical points, e.g. Γ, X, L and W, and the force constants for AlAs. The phonon dispersion is compared with a previous ab initio result and it is shown that the procedure presented herein is useful. A brief discussion is also given of the analysis of the second-order Raman spectra of AlSb.

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