Secondary defect distribution in high energy ion implanted 4H-SiC

T. Ohno, Naoto Kobayashi

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The distribution of secondary defects in B + or Al + implanted 4H-SiC is examined using TEM and SIMS. They distribute from the projected range for low dosage case and from near surface for high dosage case, and they distribute to the depth at the concentration of about 10% of the maximum dopant concentration. These secondary defects are extrinsic dislocation loops and the distribution of them is closely related to that of excess Si and C interstitials formed by implantation.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

ASJC Scopus subject areas

  • Materials Science(all)

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  • Cite this

    Ohno, T., & Kobayashi, N. (2000). Secondary defect distribution in high energy ion implanted 4H-SiC. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.