Secondary-ion-mass-spectrometry depth profiling of ultra-shallow boron delta layers in silicon with massive molecular ion beam of Ir 4(CO)7+

Yukio Fujiwara, Kouji Kondou, Kouji Watanabe, Hidehiko Nonaka, Naoaki Saito, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

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7 Citations (Scopus)

Abstract

Tetrairidium dodecacarbonyl, Ir4(CO)12, is a massive compound called metal cluster complex, which has a molecular weight of 1104.9. Using an Ir4(CO)7Y+ primary ion beam, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples was performed. Depth resolution, defined by 1 /e decay length for the trailing edge of the boron delta layer, was investigated in the beam energy ranging from 2.5 to 10keV at an incident angle of 45°. Experimental results showed that the depth resolution improved with oxygen partial pressure at a beam energy of 5 keV. It was confirmed that the depth resolution without oxygen flooding monotonically improved as beam energy decreased. Furthermore, it was found that the favorable effect of oxygen flooding on depth resolution weakened as beam energy was reduced.

Original languageEnglish
Pages (from-to)7599-7601
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number11
DOIs
Publication statusPublished - 2007 Nov 6

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Keywords

  • Atomic mixing
  • Boron
  • Cluster
  • Decay length
  • Depth profiling
  • Depth resolution
  • Ion beam
  • Ir(CO)
  • SIMS
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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