Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

A technique for the selective-area growth of GaAs on a nanometer scale is described. The technique comprises nitrogen (N)-passivation mask formation, scanning-tunneling-microscopy (STM) pattern modification, and metalorganic molecular-beam epitaxy. GaAs (001) surfaces are passivated with N radicals dissociated from N2 molecules and are modified by STM on a nanometer scale. GaAs nanostructures are then grown on the modified areas using trimethylgallium and tertiarybutylarsine. Uniform 6-nm-high and 50×50-nm2 dots were formed on 50×50-nm2 STM-modified areas. The advantage of the technique is that size-controlled nanostructures can be fabricated in specific positions and these nanostructures are free from contamination because all processes are performed in a vacuum.

Original languageEnglish
Pages (from-to)1161-1163
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number9
Publication statusPublished - 1997 Mar 3
Externally publishedYes

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passivity
scanning tunneling microscopy
nitrogen
contamination
molecular beam epitaxy
masks
vacuum
molecules

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale. / Kasu, Makoto; Makimoto, Toshiki; Kobayashi, Naoki.

In: Applied Physics Letters, Vol. 70, No. 9, 03.03.1997, p. 1161-1163.

Research output: Contribution to journalArticle

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