Abstract
A technique for the selective-area growth of GaAs on a nanometer scale is described. The technique comprises nitrogen (N)-passivation mask formation, scanning-tunneling-microscopy (STM) pattern modification, and metalorganic molecular-beam epitaxy. GaAs (001) surfaces are passivated with N radicals dissociated from N2 molecules and are modified by STM on a nanometer scale. GaAs nanostructures are then grown on the modified areas using trimethylgallium and tertiarybutylarsine. Uniform 6-nm-high and 50×50-nm2 dots were formed on 50×50-nm2 STM-modified areas. The advantage of the technique is that size-controlled nanostructures can be fabricated in specific positions and these nanostructures are free from contamination because all processes are performed in a vacuum.
| Original language | English |
|---|---|
| Pages (from-to) | 1161-1163 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 70 |
| Issue number | 9 |
| Publication status | Published - 1997 Mar 3 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale. / Kasu, Makoto; Makimoto, Toshiki; Kobayashi, Naoki.
In: Applied Physics Letters, Vol. 70, No. 9, 03.03.1997, p. 1161-1163.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale
AU - Kasu, Makoto
AU - Makimoto, Toshiki
AU - Kobayashi, Naoki
PY - 1997/3/3
Y1 - 1997/3/3
N2 - A technique for the selective-area growth of GaAs on a nanometer scale is described. The technique comprises nitrogen (N)-passivation mask formation, scanning-tunneling-microscopy (STM) pattern modification, and metalorganic molecular-beam epitaxy. GaAs (001) surfaces are passivated with N radicals dissociated from N2 molecules and are modified by STM on a nanometer scale. GaAs nanostructures are then grown on the modified areas using trimethylgallium and tertiarybutylarsine. Uniform 6-nm-high and 50×50-nm2 dots were formed on 50×50-nm2 STM-modified areas. The advantage of the technique is that size-controlled nanostructures can be fabricated in specific positions and these nanostructures are free from contamination because all processes are performed in a vacuum.
AB - A technique for the selective-area growth of GaAs on a nanometer scale is described. The technique comprises nitrogen (N)-passivation mask formation, scanning-tunneling-microscopy (STM) pattern modification, and metalorganic molecular-beam epitaxy. GaAs (001) surfaces are passivated with N radicals dissociated from N2 molecules and are modified by STM on a nanometer scale. GaAs nanostructures are then grown on the modified areas using trimethylgallium and tertiarybutylarsine. Uniform 6-nm-high and 50×50-nm2 dots were formed on 50×50-nm2 STM-modified areas. The advantage of the technique is that size-controlled nanostructures can be fabricated in specific positions and these nanostructures are free from contamination because all processes are performed in a vacuum.
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UR - http://www.scopus.com/inward/citedby.url?scp=0007332140&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0007332140
VL - 70
SP - 1161
EP - 1163
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
ER -