Selective growth of carbon nanostructures on nickel implanted nanopyramid array

D. Ferrer, T. Shinada, Takashi Tanii, J. Kurosawa, G. Zhong, Y. Kubo, S. Okamoto, Hiroshi Kawarada, I. Ohdomari

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    Carbon nanostructures (CN) have been selectively grown directly onto the top of nickel ion implanted nanopyramid array (Ni NPA) by the plasma enhanced chemical vapor deposition (p-CVD) technique. Firstly, NPA were fabricated by taking advantage of the anisotropic etching characteristics of silicon in hydrazine (N2H4H2O); where the ion implanted area acted as a mask for hydrazine etching. Secondly, carbon nanostructures were grown on Ni NPA by feeding methane/hydrogen (CH4/H2) mixtures into p-CVD reactor. The change of concentration ratio of methane to hydrogen dramatically affected the growth selectivity of CN. Methane concentrations lower than 20%, promoted the selective growth of CN on the top of Ni NPA. Morphology and chemical nature of grown species were studied by employing scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) spectroscopy, respectively.

    Original languageEnglish
    Pages (from-to)72-77
    Number of pages6
    JournalApplied Surface Science
    Volume234
    Issue number1-4
    DOIs
    Publication statusPublished - 2004 Jul 15

    Fingerprint

    hydrazine
    Nickel
    Nanostructures
    Methane
    Carbon
    nickel
    Ions
    methane
    carbon
    Hydrazine
    hydrazines
    Plasma enhanced chemical vapor deposition
    Hydrogen
    ions
    etching
    vapor deposition
    Anisotropic etching
    Silicon
    hydrogen
    Masks

    Keywords

    • Carbon nanostructures
    • Focused ion beam
    • Nanopyramid array
    • Ni
    • p-CVD
    • Selectivity
    • Single ion implantation

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Surfaces, Coatings and Films
    • Condensed Matter Physics

    Cite this

    Ferrer, D., Shinada, T., Tanii, T., Kurosawa, J., Zhong, G., Kubo, Y., ... Ohdomari, I. (2004). Selective growth of carbon nanostructures on nickel implanted nanopyramid array. Applied Surface Science, 234(1-4), 72-77. https://doi.org/10.1016/j.apsusc.2004.05.180

    Selective growth of carbon nanostructures on nickel implanted nanopyramid array. / Ferrer, D.; Shinada, T.; Tanii, Takashi; Kurosawa, J.; Zhong, G.; Kubo, Y.; Okamoto, S.; Kawarada, Hiroshi; Ohdomari, I.

    In: Applied Surface Science, Vol. 234, No. 1-4, 15.07.2004, p. 72-77.

    Research output: Contribution to journalArticle

    Ferrer, D, Shinada, T, Tanii, T, Kurosawa, J, Zhong, G, Kubo, Y, Okamoto, S, Kawarada, H & Ohdomari, I 2004, 'Selective growth of carbon nanostructures on nickel implanted nanopyramid array', Applied Surface Science, vol. 234, no. 1-4, pp. 72-77. https://doi.org/10.1016/j.apsusc.2004.05.180
    Ferrer, D. ; Shinada, T. ; Tanii, Takashi ; Kurosawa, J. ; Zhong, G. ; Kubo, Y. ; Okamoto, S. ; Kawarada, Hiroshi ; Ohdomari, I. / Selective growth of carbon nanostructures on nickel implanted nanopyramid array. In: Applied Surface Science. 2004 ; Vol. 234, No. 1-4. pp. 72-77.
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    abstract = "Carbon nanostructures (CN) have been selectively grown directly onto the top of nickel ion implanted nanopyramid array (Ni NPA) by the plasma enhanced chemical vapor deposition (p-CVD) technique. Firstly, NPA were fabricated by taking advantage of the anisotropic etching characteristics of silicon in hydrazine (N2H4H2O); where the ion implanted area acted as a mask for hydrazine etching. Secondly, carbon nanostructures were grown on Ni NPA by feeding methane/hydrogen (CH4/H2) mixtures into p-CVD reactor. The change of concentration ratio of methane to hydrogen dramatically affected the growth selectivity of CN. Methane concentrations lower than 20{\%}, promoted the selective growth of CN on the top of Ni NPA. Morphology and chemical nature of grown species were studied by employing scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) spectroscopy, respectively.",
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