Selective growth of carbon nanostructures on nickel implanted nanopyramid array

D. Ferrer, T. Shinada, T. Tanii, J. Kurosawa, G. Zhong, Y. Kubo, S. Okamoto, H. Kawarada, I. Ohdomari

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Carbon nanostructures (CN) have been selectively grown directly onto the top of nickel ion implanted nanopyramid array (Ni NPA) by the plasma enhanced chemical vapor deposition (p-CVD) technique. Firstly, NPA were fabricated by taking advantage of the anisotropic etching characteristics of silicon in hydrazine (N 2 H 4 H 2 O); where the ion implanted area acted as a mask for hydrazine etching. Secondly, carbon nanostructures were grown on Ni NPA by feeding methane/hydrogen (CH 4 /H 2 ) mixtures into p-CVD reactor. The change of concentration ratio of methane to hydrogen dramatically affected the growth selectivity of CN. Methane concentrations lower than 20%, promoted the selective growth of CN on the top of Ni NPA. Morphology and chemical nature of grown species were studied by employing scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) spectroscopy, respectively.

Original languageEnglish
Pages (from-to)72-77
Number of pages6
JournalApplied Surface Science
Volume234
Issue number1-4
DOIs
Publication statusPublished - 2004 Jul 15
EventThe Ninth International Conference on the Formation of Semicon - Madrid, Spain
Duration: 2003 Sep 152003 Sep 19

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Keywords

  • Carbon nanostructures
  • Focused ion beam
  • Nanopyramid array
  • Ni
  • Selectivity
  • Single ion implantation
  • p-CVD

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Ferrer, D., Shinada, T., Tanii, T., Kurosawa, J., Zhong, G., Kubo, Y., Okamoto, S., Kawarada, H., & Ohdomari, I. (2004). Selective growth of carbon nanostructures on nickel implanted nanopyramid array. Applied Surface Science, 234(1-4), 72-77. https://doi.org/10.1016/j.apsusc.2004.05.180