Selective growth of ZnTe on sapphire substrates using a SiO2 mask

Taizo Nakasu, Shota Hattori, Wei Che Sun, Masakazu Kobayashi

    Research output: Contribution to journalArticle

    Abstract

    ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO2-masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (=350 °C), low growth rate (≦ 0.3 μm h−1), and low JTe/JZn flux ratio (≦ 0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO2 mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO2.

    Original languageEnglish
    Pages (from-to)2265-2269
    Number of pages5
    JournalPhysica Status Solidi (B) Basic Research
    Volume253
    Issue number11
    DOIs
    Publication statusPublished - 2016 Nov 1

    Fingerprint

    Aluminum Oxide
    Sapphire
    Masks
    sapphire
    masks
    Terahertz wave detectors
    Substrates
    Fluxes
    Adatoms
    Film growth
    Molecular beam epitaxy
    Heterojunctions
    Desorption
    adatoms
    molecular beam epitaxy
    selectivity
    desorption
    nuclei
    detectors
    Temperature

    Keywords

    • heteroepitaxy
    • molecular beam epitaxy
    • sapphire
    • selective growth
    • ZnTe

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Selective growth of ZnTe on sapphire substrates using a SiO2 mask. / Nakasu, Taizo; Hattori, Shota; Sun, Wei Che; Kobayashi, Masakazu.

    In: Physica Status Solidi (B) Basic Research, Vol. 253, No. 11, 01.11.2016, p. 2265-2269.

    Research output: Contribution to journalArticle

    Nakasu, Taizo ; Hattori, Shota ; Sun, Wei Che ; Kobayashi, Masakazu. / Selective growth of ZnTe on sapphire substrates using a SiO2 mask. In: Physica Status Solidi (B) Basic Research. 2016 ; Vol. 253, No. 11. pp. 2265-2269.
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