Selective growth of ZnTe on sapphire substrates using a SiO2 mask

Taizo Nakasu, Shota Hattori, Wei Che Sun, Masakazu Kobayashi

    Research output: Contribution to journalArticle


    ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO2-masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (=350 °C), low growth rate (≦ 0.3 μm h−1), and low JTe/JZn flux ratio (≦ 0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO2 mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO2.

    Original languageEnglish
    Pages (from-to)2265-2269
    Number of pages5
    JournalPhysica Status Solidi (B) Basic Research
    Issue number11
    Publication statusPublished - 2016 Nov 1



    • heteroepitaxy
    • molecular beam epitaxy
    • sapphire
    • selective growth
    • ZnTe

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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