Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor deposition

Jing Sheng Ma, Hiroshi Kawarada, Takao Yonehara, Jun Ichi Suzuki, Jin Wei, Yoshihiro Yokota, Akio Hiraki

Research output: Contribution to journalArticle

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Abstract

Diamond particles have been selectively synthesized on a SiO2 dot-patterned Si substrate using plasma-assisted chemical vapor deposition (plasma CVD). Nucleation densities on both Si and SiO2 have been increased, first by pretreatment using abrasive powders; then, to eliminate the pretreatment effect from almost all of the substrate and to retain the effect only at designed sites, an Ar beam is used to obliquely irradiate the pretreated substrate. After deposition using plasma CVD, diamond particles have selectively formed on one edge of the SiO2 dots according to the pattern and have grown large to adjoin with adjacent particles. Polycrystals with equal grain sizes have been synthesized.

Original languageEnglish
Pages (from-to)1071-1073
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number11
DOIs
Publication statusPublished - 1989
Externally publishedYes

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diamonds
vapor deposition
nucleation
pretreatment
abrasives
polycrystals
grain size

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor deposition. / Ma, Jing Sheng; Kawarada, Hiroshi; Yonehara, Takao; Suzuki, Jun Ichi; Wei, Jin; Yokota, Yoshihiro; Hiraki, Akio.

In: Applied Physics Letters, Vol. 55, No. 11, 1989, p. 1071-1073.

Research output: Contribution to journalArticle

Ma, Jing Sheng ; Kawarada, Hiroshi ; Yonehara, Takao ; Suzuki, Jun Ichi ; Wei, Jin ; Yokota, Yoshihiro ; Hiraki, Akio. / Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor deposition. In: Applied Physics Letters. 1989 ; Vol. 55, No. 11. pp. 1071-1073.
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AU - Hiraki, Akio

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