Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

Abstract

We describe a selective area growth based on ultra-high-vacuum (UHV)-scanning-tunneling-microscopy (STM) lithography. After nitridation of GaAs surfaces and selective depassivation by UHV-STM, an array of uniform 6.4±0.8-nm high GaAs dots was successfully grown on the depassivated areas (50 nm×50 nm) using trimethylgallium (TMG) and tertiarybutylarsine. On the side walls of dots, (114) or (117) facets appeared. It was found that unintentional growth on the nitrided mask surface is due to TMG decomposition on the nitrided surface. The unintentional growth can be suppressed by using an amorphous-like nitrided surface and by increasing the thickness of the nitrided surface layer, and consequently the selectivity is improved.

Original languageEnglish
Pages (from-to)452-456
Number of pages5
JournalApplied Surface Science
Volume130-132
DOIs
Publication statusPublished - 1998 Jun
Externally publishedYes

Fingerprint

Ultrahigh vacuum
Scanning tunneling microscopy
ultrahigh vacuum
scanning tunneling microscopy
selectivity
Nitridation
flat surfaces
surface layers
masks
lithography
Lithography
Masks
decomposition
Decomposition
gallium arsenide

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth. / Kasu, Makoto; Makimoto, Toshiki; Kobayashi, Naoki.

In: Applied Surface Science, Vol. 130-132, 06.1998, p. 452-456.

Research output: Contribution to journalArticle

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