Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalConference article

Abstract

We describe a selective area growth based on ultra-high-vacuum (UHV)-scanning-tunneling-microscopy (STM) lithography. After nitridation of GaAs surfaces and selective depassivation by UHV-STM, an array of uniform 6.4±0.8-nm high GaAs dots was successfully grown on the depassivated areas (50 nm×50 nm) using trimethylgallium (TMG) and tertiarybutylarsine. On the side walls of dots, (114) or (117) facets appeared. It was found that unintentional growth on the nitrided mask surface is due to TMG decomposition on the nitrided surface. The unintentional growth can be suppressed by using an amorphous-like nitrided surface and by increasing the thickness of the nitrided surface layer, and consequently the selectivity is improved.

Original languageEnglish
Pages (from-to)452-456
Number of pages5
JournalApplied Surface Science
Volume130-132
DOIs
Publication statusPublished - 1998 Jan 1
EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
Duration: 1997 Oct 271997 Oct 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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