Abstract
Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.
Original language | English |
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Pages (from-to) | 680-683 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 214 |
DOIs | |
Publication status | Published - 2000 Jun 2 |
Externally published | Yes |
Event | The 9th International Conference on II-VI Compounds - Kyoto, Jpn Duration: 1999 Nov 1 → 1999 Nov 5 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry