Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe

K. Kitamura; H. Umeya; A. Jia; M. Shimotomai; Y. Kato; M. Kobayashi; A. Yoshikawa; K. Takahashi

doi:10.1016/S0022-0248(00)00177-9

Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe

K. Kitamura, H. Umeya, A. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi

School of Advanced Science and Engineering

Research output: Contribution to journal › Conference article

9 Citations (Scopus)

Abstract

Self-assembled quantum dots (QDs) of CdS were grown on ZnS_xSe_1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnS_xSe_1-x was increased. This shift is related to the band line-up between ZnS_xSe_1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnS_xSe_1-x were fabricated. I-V characteristics were compared for two device structures.

Original language	English
Pages (from-to)	680-683
Number of pages	4
Journal	Journal of Crystal Growth
Volume	214
DOIs	https://doi.org/10.1016/S0022-0248(00)00177-9
Publication status	Published - 2000 Jun 2
Event	The 9th International Conference on II-VI Compounds - Kyoto, Jpn Duration: 1999 Nov 1 → 1999 Nov 5

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ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Cite this

Kitamura, K., Umeya, H., Jia, A., Shimotomai, M., Kato, Y., Kobayashi, M., Yoshikawa, A., & Takahashi, K. (2000). Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe. Journal of Crystal Growth, 214, 680-683. https://doi.org/10.1016/S0022-0248(00)00177-9

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abstract = "Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.",

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AU - Kitamura, K.

AU - Umeya, H.

AU - Jia, A.

AU - Shimotomai, M.

AU - Kato, Y.

AU - Kobayashi, M.

AU - Yoshikawa, A.

AU - Takahashi, K.

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N2 - Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.

AB - Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.

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Access to Document

10.1016/S0022-0248(00)00177-9