TY - JOUR
T1 - Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe
AU - Kitamura, K.
AU - Umeya, H.
AU - Jia, A.
AU - Shimotomai, M.
AU - Kato, Y.
AU - Kobayashi, M.
AU - Yoshikawa, A.
AU - Takahashi, K.
N1 - Funding Information:
This work was supported in part by RFTF of JSPS (96R16201), and in part by a Grant-in Aid for Scientific Research from the Ministry of Education and Culture.
PY - 2000/6/2
Y1 - 2000/6/2
N2 - Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.
AB - Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.
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U2 - 10.1016/S0022-0248(00)00177-9
DO - 10.1016/S0022-0248(00)00177-9
M3 - Conference article
AN - SCOPUS:0033700838
VL - 214
SP - 680
EP - 683
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
T2 - The 9th International Conference on II-VI Compounds
Y2 - 1 November 1999 through 5 November 1999
ER -