Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe

K. Kitamura; H. Umeya; A. Jia; M. Shimotomai; Y. Kato; M. Kobayashi; A. Yoshikawa; K. Takahashi

doi:10.1016/S0022-0248(00)00177-9

Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe

K. Kitamura, H. Umeya, A. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

Self-assembled quantum dots (QDs) of CdS were grown on ZnS_xSe_1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnS_xSe_1-x was increased. This shift is related to the band line-up between ZnS_xSe_1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnS_xSe_1-x were fabricated. I-V characteristics were compared for two device structures.

Original language	English
Pages (from-to)	680-683
Number of pages	4
Journal	Journal of Crystal Growth
Volume	214
DOIs	https://doi.org/10.1016/S0022-0248(00)00177-9
Publication status	Published - 2000 Jun 2
Externally published	Yes
Event	The 9th International Conference on II-VI Compounds - Kyoto, Jpn Duration: 1999 Nov 1 → 1999 Nov 5

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe",

abstract = "Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.",

author = "K. Kitamura and H. Umeya and A. Jia and M. Shimotomai and Y. Kato and M. Kobayashi and A. Yoshikawa and K. Takahashi",

year = "2000",

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doi = "10.1016/S0022-0248(00)00177-9",

language = "English",

volume = "214",

pages = "680--683",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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note = "The 9th International Conference on II-VI Compounds ; Conference date: 01-11-1999 Through 05-11-1999",

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TY - JOUR

T1 - Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe

AU - Kitamura, K.

AU - Umeya, H.

AU - Jia, A.

AU - Shimotomai, M.

AU - Kato, Y.

AU - Kobayashi, M.

AU - Yoshikawa, A.

AU - Takahashi, K.

PY - 2000/6/2

Y1 - 2000/6/2

N2 - Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.

AB - Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.

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DO - 10.1016/S0022-0248(00)00177-9

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EP - 683

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

T2 - The 9th International Conference on II-VI Compounds

Y2 - 1 November 1999 through 5 November 1999

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