Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe

K. Kitamura, H. Umeya, A. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.

Original languageEnglish
Pages (from-to)680-683
Number of pages4
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1999 Nov 11999 Nov 5

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Kitamura, K., Umeya, H., Jia, A., Shimotomai, M., Kato, Y., Kobayashi, M., Yoshikawa, A., & Takahashi, K. (2000). Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe. Journal of Crystal Growth, 214, 680-683. https://doi.org/10.1016/S0022-0248(00)00177-9