Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe

K. Kitamura, H. Umeya, A. Jia, M. Shimotomai, Y. Kato, Masakazu Kobayashi, A. Yoshikawa, K. Takahashi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.

Original languageEnglish
Pages (from-to)680-683
Number of pages4
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
Externally publishedYes

Fingerprint

Semiconductor quantum dots
quantum dots
blue shift
Light emitting diodes
Photoluminescence
light emitting diodes
photoluminescence
shift
Chemical analysis
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Kitamura, K., Umeya, H., Jia, A., Shimotomai, M., Kato, Y., Kobayashi, M., ... Takahashi, K. (2000). Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe. Journal of Crystal Growth, 214, 680-683. https://doi.org/10.1016/S0022-0248(00)00177-9

Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe. / Kitamura, K.; Umeya, H.; Jia, A.; Shimotomai, M.; Kato, Y.; Kobayashi, Masakazu; Yoshikawa, A.; Takahashi, K.

In: Journal of Crystal Growth, Vol. 214, 02.06.2000, p. 680-683.

Research output: Contribution to journalArticle

Kitamura, K, Umeya, H, Jia, A, Shimotomai, M, Kato, Y, Kobayashi, M, Yoshikawa, A & Takahashi, K 2000, 'Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe', Journal of Crystal Growth, vol. 214, pp. 680-683. https://doi.org/10.1016/S0022-0248(00)00177-9
Kitamura, K. ; Umeya, H. ; Jia, A. ; Shimotomai, M. ; Kato, Y. ; Kobayashi, Masakazu ; Yoshikawa, A. ; Takahashi, K. / Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe. In: Journal of Crystal Growth. 2000 ; Vol. 214. pp. 680-683.
@article{61e5a65463ff4d22a062f693a1bf1e4d,
title = "Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe",
abstract = "Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.",
author = "K. Kitamura and H. Umeya and A. Jia and M. Shimotomai and Y. Kato and Masakazu Kobayashi and A. Yoshikawa and K. Takahashi",
year = "2000",
month = "6",
day = "2",
doi = "10.1016/S0022-0248(00)00177-9",
language = "English",
volume = "214",
pages = "680--683",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe

AU - Kitamura, K.

AU - Umeya, H.

AU - Jia, A.

AU - Shimotomai, M.

AU - Kato, Y.

AU - Kobayashi, Masakazu

AU - Yoshikawa, A.

AU - Takahashi, K.

PY - 2000/6/2

Y1 - 2000/6/2

N2 - Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.

AB - Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.

UR - http://www.scopus.com/inward/record.url?scp=0033700838&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033700838&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(00)00177-9

DO - 10.1016/S0022-0248(00)00177-9

M3 - Article

VL - 214

SP - 680

EP - 683

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -