Abstract
Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.
| Original language | English |
|---|---|
| Pages (from-to) | 680-683 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 214 |
| DOIs | |
| Publication status | Published - 2000 Jun 2 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe. / Kitamura, K.; Umeya, H.; Jia, A.; Shimotomai, M.; Kato, Y.; Kobayashi, Masakazu; Yoshikawa, A.; Takahashi, K.
In: Journal of Crystal Growth, Vol. 214, 02.06.2000, p. 680-683.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe
AU - Kitamura, K.
AU - Umeya, H.
AU - Jia, A.
AU - Shimotomai, M.
AU - Kato, Y.
AU - Kobayashi, Masakazu
AU - Yoshikawa, A.
AU - Takahashi, K.
PY - 2000/6/2
Y1 - 2000/6/2
N2 - Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.
AB - Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band line-up is type-II. Blue-light-emitting diode (LED) structures embedded in CdS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V characteristics were compared for two device structures.
UR - http://www.scopus.com/inward/record.url?scp=0033700838&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033700838&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(00)00177-9
DO - 10.1016/S0022-0248(00)00177-9
M3 - Article
AN - SCOPUS:0033700838
VL - 214
SP - 680
EP - 683
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -