Self-cascode MOSFET with a self-biased body effect for ultra-low-power voltage reference generator

Hao Zhang, Mengshu Huang, Yimeng Zhang, Tsutomu Yoshihara

    Research output: Contribution to journalArticle

    Abstract

    This paper proposes a novel approach for implementing an ultra-low-power voltage reference using the structure of self-cascode MOSFET, operating in the subthreshold region with a self-biased body effect. The difference between the two gate-source voltages in the structure enables the voltage reference circuit to produce a low output voltage below the threshold voltage. The circuit is designed with only MOSFETs and fabricated in standard 0.18-μm CMOS technology. Measurements show that the reference voltage is about 107.5 mV, and the temperature coefficient is about 40 ppm/°C, at a range from -20°C to 80°C. The voltage line sensitivity is 0.017%/V. The minimum supply voltage is 0.85 V, and the supply current is approximately 24 nA at 80°C. The occupied chip area is around 0.028 mm2.

    Original languageEnglish
    Pages (from-to)859-866
    Number of pages8
    JournalIEICE Transactions on Electronics
    VolumeE96-C
    Issue number6
    DOIs
    Publication statusPublished - 2013 Jun

    Keywords

    • Body effect
    • Low output
    • Self-cascode
    • Subthreshold
    • Ultra-low power
    • Voltage reference

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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