Self-timed dynamic sensing scheme for 5 V only multi-Mb flash E2PROMs

Kazuo Kobayashi, Takeshi Nakayama, Masanori Hayashikoshi, Yoshikazu Miyawaki, Yasushi Terada, Hideaki Arima, Takayuki Matsukawa, Tsutomu Yoshihara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A novel sensing scheme for high-density and high-speed sensing with a sub-10-μA cell current is presented. A source biasing method, which enhances the cell current drivability, and dynamic flip-flop sense amplifiers, in which a reference level is generated on the unselected bit lines with dummy cells, realize the high-speed and low-power operation. The potential of the dummy column is detected to control the sense amplifiers and decoders in a self-timed manner. Simulated results ensure the effectiveness of this sensing scheme for 5-V-only megabit flash E2PROMs (electrically erasable and programmable ROMs).

Original languageEnglish
Title of host publicationSymp VLSI Circuit 1989
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages39-40
Number of pages2
Publication statusPublished - 1989
Externally publishedYes
EventSymposium on VLSI Circuits 1989 - Kyoto, Japan
Duration: 1989 May 251989 May 27

Other

OtherSymposium on VLSI Circuits 1989
CityKyoto, Japan
Period89/5/2589/5/27

Fingerprint

ROM
Flip flop circuits

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, K., Nakayama, T., Hayashikoshi, M., Miyawaki, Y., Terada, Y., Arima, H., ... Yoshihara, T. (1989). Self-timed dynamic sensing scheme for 5 V only multi-Mb flash E2PROMs. In Anon (Ed.), Symp VLSI Circuit 1989 (pp. 39-40). Piscataway, NJ, United States: Publ by IEEE.

Self-timed dynamic sensing scheme for 5 V only multi-Mb flash E2PROMs. / Kobayashi, Kazuo; Nakayama, Takeshi; Hayashikoshi, Masanori; Miyawaki, Yoshikazu; Terada, Yasushi; Arima, Hideaki; Matsukawa, Takayuki; Yoshihara, Tsutomu.

Symp VLSI Circuit 1989. ed. / Anon. Piscataway, NJ, United States : Publ by IEEE, 1989. p. 39-40.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kobayashi, K, Nakayama, T, Hayashikoshi, M, Miyawaki, Y, Terada, Y, Arima, H, Matsukawa, T & Yoshihara, T 1989, Self-timed dynamic sensing scheme for 5 V only multi-Mb flash E2PROMs. in Anon (ed.), Symp VLSI Circuit 1989. Publ by IEEE, Piscataway, NJ, United States, pp. 39-40, Symposium on VLSI Circuits 1989, Kyoto, Japan, 89/5/25.
Kobayashi K, Nakayama T, Hayashikoshi M, Miyawaki Y, Terada Y, Arima H et al. Self-timed dynamic sensing scheme for 5 V only multi-Mb flash E2PROMs. In Anon, editor, Symp VLSI Circuit 1989. Piscataway, NJ, United States: Publ by IEEE. 1989. p. 39-40
Kobayashi, Kazuo ; Nakayama, Takeshi ; Hayashikoshi, Masanori ; Miyawaki, Yoshikazu ; Terada, Yasushi ; Arima, Hideaki ; Matsukawa, Takayuki ; Yoshihara, Tsutomu. / Self-timed dynamic sensing scheme for 5 V only multi-Mb flash E2PROMs. Symp VLSI Circuit 1989. editor / Anon. Piscataway, NJ, United States : Publ by IEEE, 1989. pp. 39-40
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