Self-timed dynamic sensing scheme for 5 V only multi-Mb flash E2PROMs

Kazuo Kobayashi, Takeshi Nakayama, Masanori Hayashikoshi, Yoshikazu Miyawaki, Yasushi Terada, Hideaki Arima, Takayuki Matsukawa, Tsutomu Yoshihara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A novel sensing scheme for high-density and high-speed sensing with a sub-10-μA cell current is presented. A source biasing method, which enhances the cell current drivability, and dynamic flip-flop sense amplifiers, in which a reference level is generated on the unselected bit lines with dummy cells, realize the high-speed and low-power operation. The potential of the dummy column is detected to control the sense amplifiers and decoders in a self-timed manner. Simulated results ensure the effectiveness of this sensing scheme for 5-V-only megabit flash E2PROMs (electrically erasable and programmable ROMs).

Original languageEnglish
Title of host publicationSymp VLSI Circuit 1989
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages39-40
Number of pages2
Publication statusPublished - 1989
Externally publishedYes
EventSymposium on VLSI Circuits 1989 - Kyoto, Japan
Duration: 1989 May 251989 May 27

Other

OtherSymposium on VLSI Circuits 1989
CityKyoto, Japan
Period89/5/2589/5/27

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, K., Nakayama, T., Hayashikoshi, M., Miyawaki, Y., Terada, Y., Arima, H., Matsukawa, T., & Yoshihara, T. (1989). Self-timed dynamic sensing scheme for 5 V only multi-Mb flash E2PROMs. In Anon (Ed.), Symp VLSI Circuit 1989 (pp. 39-40). Publ by IEEE.