Semiconducting conjugated oligomers for molecular electronics

D. Fichou; G. Horowitz; Yoshinori Nishikitani; F. Garnier

doi:10.1016/0379-6779(89)90596-1

Semiconducting conjugated oligomers for molecular electronics

D. Fichou^*, G. Horowitz, Yoshinori Nishikitani, F. Garnier

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Oligomers of thiophene α-5T and α-6T were synthesized and vacuum evaporated as thin solid films onto platinized glass slides. They all behave as p-type semiconductors, and good rectifying barriers were obtained at α-nT/Ag junctions. Current-voltage and capacitance-voltage measurements were made, and allowed to determine electronic parameters of the organic semiconductors, such as mobility and doping level. Their values are compared to those of a polymethylthiophene (PMeT)/Ag diode. It appears that, due to their lower concentration of structural defects, well-defined oligomers present some advantages over polymers as far as their utilization to molecular electronics is concerned.

Original language	English
Pages (from-to)	723-727
Number of pages	5
Journal	Synthetic Metals
Volume	28
Issue number	1-2
DOIs	https://doi.org/10.1016/0379-6779(89)90596-1
Publication status	Published - 1989 Jan 30
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Polymers and Plastics

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10.1016/0379-6779(89)90596-1

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abstract = "Oligomers of thiophene α-5T and α-6T were synthesized and vacuum evaporated as thin solid films onto platinized glass slides. They all behave as p-type semiconductors, and good rectifying barriers were obtained at α-nT/Ag junctions. Current-voltage and capacitance-voltage measurements were made, and allowed to determine electronic parameters of the organic semiconductors, such as mobility and doping level. Their values are compared to those of a polymethylthiophene (PMeT)/Ag diode. It appears that, due to their lower concentration of structural defects, well-defined oligomers present some advantages over polymers as far as their utilization to molecular electronics is concerned.",

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AU - Fichou, D.

AU - Horowitz, G.

AU - Nishikitani, Yoshinori

AU - Garnier, F.

PY - 1989/1/30

Y1 - 1989/1/30

N2 - Oligomers of thiophene α-5T and α-6T were synthesized and vacuum evaporated as thin solid films onto platinized glass slides. They all behave as p-type semiconductors, and good rectifying barriers were obtained at α-nT/Ag junctions. Current-voltage and capacitance-voltage measurements were made, and allowed to determine electronic parameters of the organic semiconductors, such as mobility and doping level. Their values are compared to those of a polymethylthiophene (PMeT)/Ag diode. It appears that, due to their lower concentration of structural defects, well-defined oligomers present some advantages over polymers as far as their utilization to molecular electronics is concerned.

AB - Oligomers of thiophene α-5T and α-6T were synthesized and vacuum evaporated as thin solid films onto platinized glass slides. They all behave as p-type semiconductors, and good rectifying barriers were obtained at α-nT/Ag junctions. Current-voltage and capacitance-voltage measurements were made, and allowed to determine electronic parameters of the organic semiconductors, such as mobility and doping level. Their values are compared to those of a polymethylthiophene (PMeT)/Ag diode. It appears that, due to their lower concentration of structural defects, well-defined oligomers present some advantages over polymers as far as their utilization to molecular electronics is concerned.

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Semiconducting conjugated oligomers for molecular electronics

Abstract

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