Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch

Takeo Ohno, Tsuyoshi Hasegawa, Alpana Nayak, Tohru Tsuruoka, James K. Gimzewski, Masakazu Aono

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Memorization caused by the change in conductance in a Ag2S gap-type atomic switch was investigated as a function of the amplitude and width of input voltage pulses (Vin). The conductance changed little for the first few Vin, but the information of the input was stored as a redistribution of Ag-ions in the Ag2S, indicating the formation of sensory memory. After a certain number of Vin, the conductance increased abruptly followed by a gradual decrease, indicating the formation of short-term memory (STM). We found that the probability of STM formation depends strongly on the amplitude and width of Vin, which resembles the learning behavior of the human brain.

Original languageEnglish
Article number203108
JournalApplied Physics Letters
Volume99
Issue number20
DOIs
Publication statusPublished - 2011 Nov 14
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch. / Ohno, Takeo; Hasegawa, Tsuyoshi; Nayak, Alpana; Tsuruoka, Tohru; Gimzewski, James K.; Aono, Masakazu.

In: Applied Physics Letters, Vol. 99, No. 20, 203108, 14.11.2011.

Research output: Contribution to journalArticle

Ohno, Takeo ; Hasegawa, Tsuyoshi ; Nayak, Alpana ; Tsuruoka, Tohru ; Gimzewski, James K. ; Aono, Masakazu. / Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch. In: Applied Physics Letters. 2011 ; Vol. 99, No. 20.
@article{1153511f644a4c5db4c751cda3d9ff7f,
title = "Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch",
abstract = "Memorization caused by the change in conductance in a Ag2S gap-type atomic switch was investigated as a function of the amplitude and width of input voltage pulses (Vin). The conductance changed little for the first few Vin, but the information of the input was stored as a redistribution of Ag-ions in the Ag2S, indicating the formation of sensory memory. After a certain number of Vin, the conductance increased abruptly followed by a gradual decrease, indicating the formation of short-term memory (STM). We found that the probability of STM formation depends strongly on the amplitude and width of Vin, which resembles the learning behavior of the human brain.",
author = "Takeo Ohno and Tsuyoshi Hasegawa and Alpana Nayak and Tohru Tsuruoka and Gimzewski, {James K.} and Masakazu Aono",
year = "2011",
month = "11",
day = "14",
doi = "10.1063/1.3662390",
language = "English",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch

AU - Ohno, Takeo

AU - Hasegawa, Tsuyoshi

AU - Nayak, Alpana

AU - Tsuruoka, Tohru

AU - Gimzewski, James K.

AU - Aono, Masakazu

PY - 2011/11/14

Y1 - 2011/11/14

N2 - Memorization caused by the change in conductance in a Ag2S gap-type atomic switch was investigated as a function of the amplitude and width of input voltage pulses (Vin). The conductance changed little for the first few Vin, but the information of the input was stored as a redistribution of Ag-ions in the Ag2S, indicating the formation of sensory memory. After a certain number of Vin, the conductance increased abruptly followed by a gradual decrease, indicating the formation of short-term memory (STM). We found that the probability of STM formation depends strongly on the amplitude and width of Vin, which resembles the learning behavior of the human brain.

AB - Memorization caused by the change in conductance in a Ag2S gap-type atomic switch was investigated as a function of the amplitude and width of input voltage pulses (Vin). The conductance changed little for the first few Vin, but the information of the input was stored as a redistribution of Ag-ions in the Ag2S, indicating the formation of sensory memory. After a certain number of Vin, the conductance increased abruptly followed by a gradual decrease, indicating the formation of short-term memory (STM). We found that the probability of STM formation depends strongly on the amplitude and width of Vin, which resembles the learning behavior of the human brain.

UR - http://www.scopus.com/inward/record.url?scp=81855187159&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81855187159&partnerID=8YFLogxK

U2 - 10.1063/1.3662390

DO - 10.1063/1.3662390

M3 - Article

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 203108

ER -