Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs

Toshiki Makimoto*, Naoki Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

We performed nitrogen atomic-layer doping into GaAs grown by molecular beam epitaxy using nitrogen molecules (N2) cracked by a hot tungsten filament. While uniformly nitrogen-doped GaAs layers show relatively weak nitrogen-related photoluminescence lines, nitrogen atomic-layer-doped GaAs layers show a series of sharp and strong photoluminescence lines. The dominant photoluminescence line was observed at 1.4437 eV, where an exciton bound to the nitrogen isotropic traps has the highest binding energy.

Original languageEnglish
Pages (from-to)688
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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