Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs

Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Nitrogen atomic-layer-doping (N-ALD) shows a series of strong photoluminescence (PL) lines, while uniformly N-doped GaAs shows relatively weak (PL) lines related to N atoms. It was observed that the dominant PL line at 1.4437 eV, where an exciton bound to the N isotropic traps has the highest binding energy. The N-atom distance affects the PL spectra in a different way for the N-ALD and uniformly N-doped GaAs. This might be due to the difference in the doping mechanism between the ALD and the uniform doping methods.

Original languageEnglish
Pages (from-to)688-690
Number of pages3
JournalApplied Physics Letters
Volume67
Issue number5
DOIs
Publication statusPublished - 1995 Jan 1
Externally publishedYes

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photoluminescence
nitrogen
atoms
binding energy
excitons
traps

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs. / Makimoto, Toshiki; Kobayashi, Naoki.

In: Applied Physics Letters, Vol. 67, No. 5, 01.01.1995, p. 688-690.

Research output: Contribution to journalArticle

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