Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering

Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Because the increase of piezoelectricity was found in Sc heavily doped AlN films, they have been well studied. Many researchers investigate the properties of the longitudinal mode bulk acoustic wave with c-axis normally oriented ScAlN films. However, there are few reports on the shear mode properties because of difficulties in growth of c-axis parallel oriented ScAlN films which can excite shear mode bulk acoustic wave. In this study, we demonstrated the film growth of c-axis parallel oriented ScAlN using RF substrate bias RF magnetron sputtering method. As a result of X-ray diffraction analyses, we obtained c-axis parallel oriented AlN, Sc0.05Al0.95N and Sc0.13Al0.87N films. Then, High overtone bulk acoustic wave resonators were fabricated with these films. They excited shear mode bulk acoustic wave, but shear mode conversion losses were large (more than 20 dB). It is necessary to obtain highly-crystallized ScAlN films.

    Original languageEnglish
    Title of host publication2015 IEEE International Ultrasonics Symposium, IUS 2015
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Print)9781479981823
    DOIs
    Publication statusPublished - 2015 Nov 13
    EventIEEE International Ultrasonics Symposium, IUS 2015 - Taipei, Taiwan, Province of China
    Duration: 2015 Oct 212015 Oct 24

    Other

    OtherIEEE International Ultrasonics Symposium, IUS 2015
    CountryTaiwan, Province of China
    CityTaipei
    Period15/10/2115/10/24

    Keywords

    • AlN
    • c-axis parallel orientation
    • RF bias sputtering
    • ScAlN
    • Shear wave

    ASJC Scopus subject areas

    • Acoustics and Ultrasonics

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  • Cite this

    Takayanagi, S., Matsukawa, M., & Yanagitani, T. (2015). Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering. In 2015 IEEE International Ultrasonics Symposium, IUS 2015 [7329631] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ULTSYM.2015.0537