Shear wave transducer using (112̄0) textured ZnO film

Takahiko Yanagitani; Mami Matsukawa; Yoshiaki Watanabe; Takahiko Otani

Shear wave transducer using (112̄0) textured ZnO film

Takahiko Yanagitani^*, Mami Matsukawa, Yoshiaki Watanabe, Takahiko Otani

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Using a conventional RF magnetron sputtering system, we have successfully obtained the ZnO films in which crystallites c-axis unidirectionally aligned in the substrate plane without epitaxial technique. These are almost pure (112̄0) textured films. The alignment of crystallites c-axis in the plane was then carefully investigated by the X-ray pole figure analysis and AFM. We found that the crystallites of the film oriented randomly at the anode center and unidirectionally aligned at the fringe of the anode. Using the ZnO film, we have fabricated the ultrasonic transducer which consists of metal electrode /(112̄0) textured ZnO film/Al electrode film structures. The transducer clearly excited shear wave without any longitudinal waves. These results indicate the wide application of this film as shear-mode resonators and SH-type SAW devices on any substrates.

Original language	English
Pages (from-to)	906-909
Number of pages	4
Journal	Proceedings - IEEE Ultrasonics Symposium
Volume	2
Publication status	Published - 2004 Dec 1
Externally published	Yes
Event	2004 IEEE Ultrasonics Symposium - Montreal, Que., Canada Duration: 2004 Aug 23 → 2004 Aug 27

Keywords

(11-20) Textured films
Shear wave transducer
ZnO film

ASJC Scopus subject areas

Acoustics and Ultrasonics

Cite this

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title = "Shear wave transducer using (11{\=2}0) textured ZnO film",

abstract = "Using a conventional RF magnetron sputtering system, we have successfully obtained the ZnO films in which crystallites c-axis unidirectionally aligned in the substrate plane without epitaxial technique. These are almost pure (11{\=2}0) textured films. The alignment of crystallites c-axis in the plane was then carefully investigated by the X-ray pole figure analysis and AFM. We found that the crystallites of the film oriented randomly at the anode center and unidirectionally aligned at the fringe of the anode. Using the ZnO film, we have fabricated the ultrasonic transducer which consists of metal electrode /(11{\=2}0) textured ZnO film/Al electrode film structures. The transducer clearly excited shear wave without any longitudinal waves. These results indicate the wide application of this film as shear-mode resonators and SH-type SAW devices on any substrates.",

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author = "Takahiko Yanagitani and Mami Matsukawa and Yoshiaki Watanabe and Takahiko Otani",

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note = "2004 IEEE Ultrasonics Symposium ; Conference date: 23-08-2004 Through 27-08-2004",

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T1 - Shear wave transducer using (112̄0) textured ZnO film

AU - Yanagitani, Takahiko

AU - Matsukawa, Mami

AU - Watanabe, Yoshiaki

AU - Otani, Takahiko

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Using a conventional RF magnetron sputtering system, we have successfully obtained the ZnO films in which crystallites c-axis unidirectionally aligned in the substrate plane without epitaxial technique. These are almost pure (112̄0) textured films. The alignment of crystallites c-axis in the plane was then carefully investigated by the X-ray pole figure analysis and AFM. We found that the crystallites of the film oriented randomly at the anode center and unidirectionally aligned at the fringe of the anode. Using the ZnO film, we have fabricated the ultrasonic transducer which consists of metal electrode /(112̄0) textured ZnO film/Al electrode film structures. The transducer clearly excited shear wave without any longitudinal waves. These results indicate the wide application of this film as shear-mode resonators and SH-type SAW devices on any substrates.

AB - Using a conventional RF magnetron sputtering system, we have successfully obtained the ZnO films in which crystallites c-axis unidirectionally aligned in the substrate plane without epitaxial technique. These are almost pure (112̄0) textured films. The alignment of crystallites c-axis in the plane was then carefully investigated by the X-ray pole figure analysis and AFM. We found that the crystallites of the film oriented randomly at the anode center and unidirectionally aligned at the fringe of the anode. Using the ZnO film, we have fabricated the ultrasonic transducer which consists of metal electrode /(112̄0) textured ZnO film/Al electrode film structures. The transducer clearly excited shear wave without any longitudinal waves. These results indicate the wide application of this film as shear-mode resonators and SH-type SAW devices on any substrates.

KW - (11-20) Textured films

KW - Shear wave transducer

KW - ZnO film

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JO - Proceedings of the IEEE Ultrasonics Symposium

JF - Proceedings of the IEEE Ultrasonics Symposium

T2 - 2004 IEEE Ultrasonics Symposium

Y2 - 23 August 2004 through 27 August 2004

ER -

Shear wave transducer using (112̄0) textured ZnO film

Abstract

Keywords

ASJC Scopus subject areas

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