Shear wave transducer using (112̄0) textured ZnO film

Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe, Takahiko Otani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Using a conventional RF magnetron sputtering system, we have successfully obtained the ZnO films in which crystallites c-axis unidirectionally aligned in the substrate plane without epitaxial technique. These are almost pure (112̄0) textured films. The alignment of crystallites c-axis in the plane was then carefully investigated by the X-ray pole figure analysis and AFM. We found that the crystallites of the film oriented randomly at the anode center and unidirectionally aligned at the fringe of the anode. Using the ZnO film, we have fabricated the ultrasonic transducer which consists of metal electrode /(112̄0) textured ZnO film/Al electrode film structures. The transducer clearly excited shear wave without any longitudinal waves. These results indicate the wide application of this film as shear-mode resonators and SH-type SAW devices on any substrates.

Original languageEnglish
Title of host publicationProceedings - IEEE Ultrasonics Symposium
EditorsM.P. Yuhas
Pages906-909
Number of pages4
Volume2
Publication statusPublished - 2004
Externally publishedYes
Event2004 IEEE Ultrasonics Symposium - Montreal, Que., Canada
Duration: 2004 Aug 232004 Aug 27

Other

Other2004 IEEE Ultrasonics Symposium
CountryCanada
CityMontreal, Que.
Period04/8/2304/8/27

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Keywords

  • (11-20) Textured films
  • Shear wave transducer
  • ZnO film

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yanagitani, T., Matsukawa, M., Watanabe, Y., & Otani, T. (2004). Shear wave transducer using (112̄0) textured ZnO film. In M. P. Yuhas (Ed.), Proceedings - IEEE Ultrasonics Symposium (Vol. 2, pp. 906-909)