Shift-aligned GSG transitions through a silicon wafer

Tamotsu Nishino; Yoshio Fujii; Hiroshi Fukumoto; Yukihisa Yoshida; Moriyasu Miyazaki; Tadashi Takagi

doi:10.1109/EUMC.2005.1608821

Shift-aligned GSG transitions through a silicon wafer

Tamotsu Nishino^*, Yoshio Fujii, Hiroshi Fukumoto, Yukihisa Yoshida, Moriyasu Miyazaki, Tadashi Takagi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Transitions composed of three via-holes, which are aligned in triangular shape, is proposed. The transition realized a high-frequency signal path from the surface of a thick silicon wafer to the other side. To reduce the reflection loss, the signal via is disposed shifted. The transition is fabricated with our developing molten solder ejection method, which ejects small droplets of solder like an ink-jet-printer. Without utilizing thick metallizing process inside the holes, high aspect ratio structure was achieved. The height of the holes is 250μm in this study with diameter of 100μm. The measured results showed the shift-aligned GSG transition had 0.4dB loss at 40GHz.

Original language	English
Title of host publication	35th European Microwave Conference 2005 - Conference Proceedings
Pages	173-175
Number of pages	3
DOIs	https://doi.org/10.1109/EUMC.2005.1608821
Publication status	Published - 2005
Externally published	Yes
Event	2005 European Microwave Conference - Paris, France Duration: 2005 Oct 4 → 2005 Oct 6

Publication series

Name	35th European Microwave Conference 2005 - Conference Proceedings
Volume	1

Conference

Conference	2005 European Microwave Conference
Country/Territory	France
City	Paris
Period	05/10/4 → 05/10/6

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/EUMC.2005.1608821

Cite this

Shift-aligned GSG transitions through a silicon wafer. / Nishino, Tamotsu; Fujii, Yoshio; Fukumoto, Hiroshi et al.

35th European Microwave Conference 2005 - Conference Proceedings. 2005. p. 173-175 1608821 (35th European Microwave Conference 2005 - Conference Proceedings; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nishino, T, Fujii, Y, Fukumoto, H, Yoshida, Y, Miyazaki, M & Takagi, T 2005, Shift-aligned GSG transitions through a silicon wafer. in 35th European Microwave Conference 2005 - Conference Proceedings., 1608821, 35th European Microwave Conference 2005 - Conference Proceedings, vol. 1, pp. 173-175, 2005 European Microwave Conference, Paris, France, 05/10/4. https://doi.org/10.1109/EUMC.2005.1608821

@inproceedings{3075ac3f08654ea08aa75a6e33e6d5d8,

title = "Shift-aligned GSG transitions through a silicon wafer",

abstract = "Transitions composed of three via-holes, which are aligned in triangular shape, is proposed. The transition realized a high-frequency signal path from the surface of a thick silicon wafer to the other side. To reduce the reflection loss, the signal via is disposed shifted. The transition is fabricated with our developing molten solder ejection method, which ejects small droplets of solder like an ink-jet-printer. Without utilizing thick metallizing process inside the holes, high aspect ratio structure was achieved. The height of the holes is 250μm in this study with diameter of 100μm. The measured results showed the shift-aligned GSG transition had 0.4dB loss at 40GHz.",

author = "Tamotsu Nishino and Yoshio Fujii and Hiroshi Fukumoto and Yukihisa Yoshida and Moriyasu Miyazaki and Tadashi Takagi",

year = "2005",

doi = "10.1109/EUMC.2005.1608821",

language = "English",

isbn = "2960055128",

series = "35th European Microwave Conference 2005 - Conference Proceedings",

pages = "173--175",

booktitle = "35th European Microwave Conference 2005 - Conference Proceedings",

note = "2005 European Microwave Conference ; Conference date: 04-10-2005 Through 06-10-2005",

}

TY - GEN

T1 - Shift-aligned GSG transitions through a silicon wafer

AU - Nishino, Tamotsu

AU - Fujii, Yoshio

AU - Fukumoto, Hiroshi

AU - Yoshida, Yukihisa

AU - Miyazaki, Moriyasu

AU - Takagi, Tadashi

PY - 2005

Y1 - 2005

N2 - Transitions composed of three via-holes, which are aligned in triangular shape, is proposed. The transition realized a high-frequency signal path from the surface of a thick silicon wafer to the other side. To reduce the reflection loss, the signal via is disposed shifted. The transition is fabricated with our developing molten solder ejection method, which ejects small droplets of solder like an ink-jet-printer. Without utilizing thick metallizing process inside the holes, high aspect ratio structure was achieved. The height of the holes is 250μm in this study with diameter of 100μm. The measured results showed the shift-aligned GSG transition had 0.4dB loss at 40GHz.

AB - Transitions composed of three via-holes, which are aligned in triangular shape, is proposed. The transition realized a high-frequency signal path from the surface of a thick silicon wafer to the other side. To reduce the reflection loss, the signal via is disposed shifted. The transition is fabricated with our developing molten solder ejection method, which ejects small droplets of solder like an ink-jet-printer. Without utilizing thick metallizing process inside the holes, high aspect ratio structure was achieved. The height of the holes is 250μm in this study with diameter of 100μm. The measured results showed the shift-aligned GSG transition had 0.4dB loss at 40GHz.

UR - http://www.scopus.com/inward/record.url?scp=33847142880&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847142880&partnerID=8YFLogxK

U2 - 10.1109/EUMC.2005.1608821

DO - 10.1109/EUMC.2005.1608821

M3 - Conference contribution

AN - SCOPUS:33847142880

SN - 2960055128

SN - 9782960055122

T3 - 35th European Microwave Conference 2005 - Conference Proceedings

SP - 173

EP - 175

BT - 35th European Microwave Conference 2005 - Conference Proceedings

T2 - 2005 European Microwave Conference

Y2 - 4 October 2005 through 6 October 2005

ER -

Shift-aligned GSG transitions through a silicon wafer

Abstract

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