Short exciton radiative lifetime in submonolayer InGaAsGaAs quantum dots

Zhangcheng Xu, Yating Zhang, Atsushi Tackeuchi, Yoshiji Horikoshi, Jørn M. Hvam

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    The exciton radiative lifetime in submonolayer (SML) InGaAsGaAs quantum dots (QDs) grown at 500 °C was measured by using time-resolved photoluminescence from 10 to 260 K. The radiative lifetime is around 90 ps and is independent of temperature below 50 K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20-30 nm in diameter and embedded within the lateral InGaAs QW.

    Original languageEnglish
    Article number063103
    JournalApplied Physics Letters
    Volume92
    Issue number6
    DOIs
    Publication statusPublished - 2008

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    radiative lifetime
    quantum dots
    excitons
    quantum wells
    photoluminescence
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Short exciton radiative lifetime in submonolayer InGaAsGaAs quantum dots. / Xu, Zhangcheng; Zhang, Yating; Tackeuchi, Atsushi; Horikoshi, Yoshiji; Hvam, Jørn M.

    In: Applied Physics Letters, Vol. 92, No. 6, 063103, 2008.

    Research output: Contribution to journalArticle

    Xu, Zhangcheng ; Zhang, Yating ; Tackeuchi, Atsushi ; Horikoshi, Yoshiji ; Hvam, Jørn M. / Short exciton radiative lifetime in submonolayer InGaAsGaAs quantum dots. In: Applied Physics Letters. 2008 ; Vol. 92, No. 6.
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