Short exciton radiative lifetime in submonolayer InGaAsGaAs quantum dots

Zhangcheng Xu, Yating Zhang, Atsushi Tackeuchi, Yoshiji Horikoshi, Jørn M. Hvam

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Abstract

The exciton radiative lifetime in submonolayer (SML) InGaAsGaAs quantum dots (QDs) grown at 500 °C was measured by using time-resolved photoluminescence from 10 to 260 K. The radiative lifetime is around 90 ps and is independent of temperature below 50 K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20-30 nm in diameter and embedded within the lateral InGaAs QW.

Original languageEnglish
Article number063103
JournalApplied Physics Letters
Volume92
Issue number6
DOIs
Publication statusPublished - 2008 Feb 22

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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