Si doping mechanism in Si doped GaAsN

T. Tsukasaki, R. Hiyoshi, M. Fujita, T. Makimoto

Research output: Contribution to journalArticle

Abstract

The Si doping mechanism is systematically investigated in dilute nitride GaAsN grown by radio frequency plasma assisted molecular beam epitaxy (RF-MBE). We change growth temperature, Si impurity concentration ([Si]), and nitrogen composition ([N]). The relationship between Si activation ratio (α) and [N] are evaluated using X-ray diffraction (XRD) 2θ-ω and Hall effect measurement. As [N] in GaAsN increases, α drastically decreases, which is ascribed to mechanisms of inactive Si donors such as a cluster of Si and N at an As site ((Si-N) As ). We find that the main factor of inactive Si donors in GaAsN depends on both [Si] and [N].

Original languageEnglish
Pages (from-to)45-48
Number of pages4
JournalJournal of Crystal Growth
Volume514
DOIs
Publication statusPublished - 2019 May 15

Fingerprint

Hall effect
Growth temperature
Molecular beam epitaxy
Nitrides
Nitrogen
Chemical activation
Doping (additives)
Impurities
Plasmas
X ray diffraction
Chemical analysis
nitrides
radio frequencies
molecular beam epitaxy
activation
nitrogen
impurities
diffraction
x rays
temperature

Keywords

  • A1. Doping mechanism
  • A1. Electron activation energy
  • A1. Electron concentration
  • A1. Si activation ratio
  • A3. Molecular beam epitaxy
  • B1. GaAsN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Si doping mechanism in Si doped GaAsN. / Tsukasaki, T.; Hiyoshi, R.; Fujita, M.; Makimoto, T.

In: Journal of Crystal Growth, Vol. 514, 15.05.2019, p. 45-48.

Research output: Contribution to journalArticle

Tsukasaki, T. ; Hiyoshi, R. ; Fujita, M. ; Makimoto, T. / Si doping mechanism in Si doped GaAsN. In: Journal of Crystal Growth. 2019 ; Vol. 514. pp. 45-48.
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