Si island formation on domain boundaries induced by Ar ion irradiation on high-temperature Si(III)-7 × 7 dimer-adatom-stacking fault surfaces

Makoto Uchigasaki, Kenichi Tomiki, Takefumi Kamioka, Eiji Nakayama, Takanobu Watanabe, Iwao Ohdomari

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    Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept at 500°C before, during and after Ar ion irradiation. We found that Si islands grew up within ion irradiation selectively along the boundaries of domains of 7 × 7 dimer-adatom-stacking (DAS) faults. The Si islands were 1 double atomic layer high and had the 7 × 7 DAS reconstruction. The area of the islands increased linearly with ion doses up to 2.5 × 10 14 cm-2.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Issue number8-11
    Publication statusPublished - 2005



    • Annealing
    • Crystal growth
    • Point defect
    • Surface modification

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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