Si nano-photodiode with a surface plasmon antenna

Tsutomu Ishi, Junichi Fujikata, Kikuo Marita, Toshio Baba, Keishi Ohashi

Research output: Contribution to journalArticle

291 Citations (Scopus)

Abstract

Nano-photodiodes with a subwavelength active area using the optical near-field enhanced by surface plasmon resonance are proposed. We fabricated a Si Schottky photodiode that consists of an active area of 300 nm in diameter and a surface plasmon antenna to generate the carrier within the active area efficiently. The fabricated photodiode shows an increase of the photocurrent by several tenfold compared to that without a surface plasmon antenna. This result suggests an enhanced photogeneration of carriers in a semiconductor via surface plasmon resonance. Such a Si nano-photodiode is a potential high-speed optical signal detector because the opto-electronic conversion process occurs within a subwavelength scale.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number12-15
DOIs
Publication statusPublished - 2005
Externally publishedYes

Fingerprint

Photodiodes
photodiodes
antennas
Antennas
Surface plasmon resonance
surface plasmon resonance
signal detectors
Photocurrents
photocurrents
optical communication
near fields
high speed
Semiconductor materials
Detectors
electronics

Keywords

  • Optical near-field
  • Photodiode
  • Subwavelength aperture
  • Surface plasmon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Si nano-photodiode with a surface plasmon antenna. / Ishi, Tsutomu; Fujikata, Junichi; Marita, Kikuo; Baba, Toshio; Ohashi, Keishi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 12-15, 2005.

Research output: Contribution to journalArticle

Ishi, Tsutomu ; Fujikata, Junichi ; Marita, Kikuo ; Baba, Toshio ; Ohashi, Keishi. / Si nano-photodiode with a surface plasmon antenna. In: Japanese Journal of Applied Physics, Part 2: Letters. 2005 ; Vol. 44, No. 12-15.
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AU - Ohashi, Keishi

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