Si - O - Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2

Shuji Munekuni, Nobuyuki Dohguchi, Hiroyuki Nishikawa, Yoshimichi Ohki, Kaya Nagasawa, Yoshimasa Hama

    Research output: Contribution to journalArticle

    24 Citations (Scopus)

    Abstract

    Mechanical stress is applied to high-purity amorphous SiO2 samples by means of fracturing. The electron-spin-resonance spectra suggest that the formation of a majority of paramagnetic defects is from cleavage of Si - O - Si bridges in the glass network, but there are some sample-to-sample variances in fracture-induced paramagnetic defects, suggesting cleavage of differing chemical bonding states in the samples. Nonstoichiometric bonds, ≡Si - Si≡ and ≡Si - O - O - Si≡, are assumed to be one reason for the sample dependency. Formation of Si - O - Si strained bonds from mechanical fracturing is confirmed from sequential γ-ray irradiation and heat annealing experiments. The Si - O - Si strained bond is approximately annealed at about 300°C. By comparing the fracture-induced defects for glass preforms and optical fibers, the change in chemical bonding state can be analyzed. Analysis of mechanical-fracture-induced defects is a strong technique for elucidation of the chemical bonding state of silica glass.

    Original languageEnglish
    Pages (from-to)5054-5062
    Number of pages9
    JournalJournal of Applied Physics
    Volume70
    Issue number9
    DOIs
    Publication statusPublished - 1991

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    fracturing
    defects
    cleavage
    preforms
    glass
    silica glass
    rays
    electron paramagnetic resonance
    purity
    optical fibers
    heat
    irradiation
    annealing
    fibers

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Si - O - Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2 . / Munekuni, Shuji; Dohguchi, Nobuyuki; Nishikawa, Hiroyuki; Ohki, Yoshimichi; Nagasawa, Kaya; Hama, Yoshimasa.

    In: Journal of Applied Physics, Vol. 70, No. 9, 1991, p. 5054-5062.

    Research output: Contribution to journalArticle

    Munekuni, Shuji ; Dohguchi, Nobuyuki ; Nishikawa, Hiroyuki ; Ohki, Yoshimichi ; Nagasawa, Kaya ; Hama, Yoshimasa. / Si - O - Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2 In: Journal of Applied Physics. 1991 ; Vol. 70, No. 9. pp. 5054-5062.
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    abstract = "Mechanical stress is applied to high-purity amorphous SiO2 samples by means of fracturing. The electron-spin-resonance spectra suggest that the formation of a majority of paramagnetic defects is from cleavage of Si - O - Si bridges in the glass network, but there are some sample-to-sample variances in fracture-induced paramagnetic defects, suggesting cleavage of differing chemical bonding states in the samples. Nonstoichiometric bonds, ≡Si - Si≡ and ≡Si - O - O - Si≡, are assumed to be one reason for the sample dependency. Formation of Si - O - Si strained bonds from mechanical fracturing is confirmed from sequential γ-ray irradiation and heat annealing experiments. The Si - O - Si strained bond is approximately annealed at about 300°C. By comparing the fracture-induced defects for glass preforms and optical fibers, the change in chemical bonding state can be analyzed. Analysis of mechanical-fracture-induced defects is a strong technique for elucidation of the chemical bonding state of silica glass.",
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    AU - Munekuni, Shuji

    AU - Dohguchi, Nobuyuki

    AU - Nishikawa, Hiroyuki

    AU - Ohki, Yoshimichi

    AU - Nagasawa, Kaya

    AU - Hama, Yoshimasa

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    AB - Mechanical stress is applied to high-purity amorphous SiO2 samples by means of fracturing. The electron-spin-resonance spectra suggest that the formation of a majority of paramagnetic defects is from cleavage of Si - O - Si bridges in the glass network, but there are some sample-to-sample variances in fracture-induced paramagnetic defects, suggesting cleavage of differing chemical bonding states in the samples. Nonstoichiometric bonds, ≡Si - Si≡ and ≡Si - O - O - Si≡, are assumed to be one reason for the sample dependency. Formation of Si - O - Si strained bonds from mechanical fracturing is confirmed from sequential γ-ray irradiation and heat annealing experiments. The Si - O - Si strained bond is approximately annealed at about 300°C. By comparing the fracture-induced defects for glass preforms and optical fibers, the change in chemical bonding state can be analyzed. Analysis of mechanical-fracture-induced defects is a strong technique for elucidation of the chemical bonding state of silica glass.

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