Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating

Takuma Aihara, Tatsurou Hiraki, Koji Takeda, Koichi Hasebe, Takuro Fujii, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have demonstrated 32-Gbit/s direct modulation of Si waveguide integrated membrane buried heterostructure laser with 500-μm-long cavity, whose cavity consists of a multiple phase-shift grating to suppress the spatial hole burning effect. The optical output power was 9 mW at a stage temperature of 25 C.

Original languageEnglish
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages83-84
Number of pages2
ISBN (Electronic)9781538664865
DOIs
Publication statusPublished - 2018 Oct 30
Externally publishedYes
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
Duration: 2018 Sep 162018 Sep 19

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume2018-September
ISSN (Print)0899-9406

Other

Other26th International Semiconductor Laser Conference, ISLC 2018
CountryUnited States
CitySanta Fe
Period18/9/1618/9/19

Fingerprint

Distributed feedback lasers
Phase shift
Heterojunctions
Waveguides
phase shift
Modulation
gratings
membranes
waveguides
Membranes
cavities
Lasers
hole burning
lasers
modulation
Temperature
output
temperature

Keywords

  • direct modulation
  • Membrane laser
  • Si photonics

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Aihara, T., Hiraki, T., Takeda, K., Hasebe, K., Fujii, T., Tsuchizawa, T., ... Matsuo, S. (2018). Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 83-84). [8516177] (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516177

Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating. / Aihara, Takuma; Hiraki, Tatsurou; Takeda, Koji; Hasebe, Koichi; Fujii, Takuro; Tsuchizawa, Tai; Kakitsuka, Takaaki; Matsuo, Shinji.

26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 83-84 8516177 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Aihara, T, Hiraki, T, Takeda, K, Hasebe, K, Fujii, T, Tsuchizawa, T, Kakitsuka, T & Matsuo, S 2018, Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating. in 26th International Semiconductor Laser Conference, ISLC 2018., 8516177, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 2018-September, Institute of Electrical and Electronics Engineers Inc., pp. 83-84, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 18/9/16. https://doi.org/10.1109/ISLC.2018.8516177
Aihara T, Hiraki T, Takeda K, Hasebe K, Fujii T, Tsuchizawa T et al. Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating. In 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 83-84. 8516177. (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2018.8516177
Aihara, Takuma ; Hiraki, Tatsurou ; Takeda, Koji ; Hasebe, Koichi ; Fujii, Takuro ; Tsuchizawa, Tai ; Kakitsuka, Takaaki ; Matsuo, Shinji. / Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating. 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 83-84 (Conference Digest - IEEE International Semiconductor Laser Conference).
@inproceedings{be2e8dea5cf149a1bc1024a97b92c4dd,
title = "Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating",
abstract = "We have demonstrated 32-Gbit/s direct modulation of Si waveguide integrated membrane buried heterostructure laser with 500-μm-long cavity, whose cavity consists of a multiple phase-shift grating to suppress the spatial hole burning effect. The optical output power was 9 mW at a stage temperature of 25 C.",
keywords = "direct modulation, Membrane laser, Si photonics",
author = "Takuma Aihara and Tatsurou Hiraki and Koji Takeda and Koichi Hasebe and Takuro Fujii and Tai Tsuchizawa and Takaaki Kakitsuka and Shinji Matsuo",
year = "2018",
month = "10",
day = "30",
doi = "10.1109/ISLC.2018.8516177",
language = "English",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "83--84",
booktitle = "26th International Semiconductor Laser Conference, ISLC 2018",

}

TY - GEN

T1 - Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating

AU - Aihara, Takuma

AU - Hiraki, Tatsurou

AU - Takeda, Koji

AU - Hasebe, Koichi

AU - Fujii, Takuro

AU - Tsuchizawa, Tai

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

PY - 2018/10/30

Y1 - 2018/10/30

N2 - We have demonstrated 32-Gbit/s direct modulation of Si waveguide integrated membrane buried heterostructure laser with 500-μm-long cavity, whose cavity consists of a multiple phase-shift grating to suppress the spatial hole burning effect. The optical output power was 9 mW at a stage temperature of 25 C.

AB - We have demonstrated 32-Gbit/s direct modulation of Si waveguide integrated membrane buried heterostructure laser with 500-μm-long cavity, whose cavity consists of a multiple phase-shift grating to suppress the spatial hole burning effect. The optical output power was 9 mW at a stage temperature of 25 C.

KW - direct modulation

KW - Membrane laser

KW - Si photonics

UR - http://www.scopus.com/inward/record.url?scp=85057360604&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057360604&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2018.8516177

DO - 10.1109/ISLC.2018.8516177

M3 - Conference contribution

AN - SCOPUS:85057360604

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 83

EP - 84

BT - 26th International Semiconductor Laser Conference, ISLC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -