Si//3N//4 FORMATION IN THE CARBOTHERMAL REDUCTION PROCESS OF A MAGADIITE-POLYACRYLONITRILE INTERCALATION COMPOUND.

Yoshiyuki Sugahara, Yasuyuki Nomizu, Kazuyuki Kuroda, Chuzo Kato

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    Silicon nitride was formed from a magadiite (layered polysilicate)-polyacrylonitrile (PAN) intercalation compound through a novel process of carbothermal reduction. SiO//2 from magadiite was reduced above 1400 degree C without the formation of any crystalline oxides. On heating above 1400 degree C, both alpha - and beta -Si//3N//4 were detected, and the additional formation of alpha - and beta -SiC was observed by heating at 1600 degree C. On the other hand, the reactions for the synthesis from a magadiite-carbon mixture involved the formation of cristobalite as well as alpha - and beta -Si//3N//4, and beta -SiC. In addition, it was also indicated that the mixture was less reactive for the formation of Si//3N//4.

    Original languageEnglish
    Pages (from-to)124-129
    Number of pages6
    JournalYogyo Kyokai Shi/Journal of the Ceramic Society of Japan
    Volume95
    Issue number1
    Publication statusPublished - 1987

    Fingerprint

    Carbothermal reduction
    Intercalation compounds
    polyacrylonitrile
    Polyacrylonitriles
    intercalation
    Heating
    Silicon nitride
    Silicon Dioxide
    Oxides
    Carbon
    Crystalline materials
    heating
    silicon nitrides
    oxides
    carbon
    synthesis
    silicon nitride

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

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    title = "Si//3N//4 FORMATION IN THE CARBOTHERMAL REDUCTION PROCESS OF A MAGADIITE-POLYACRYLONITRILE INTERCALATION COMPOUND.",
    abstract = "Silicon nitride was formed from a magadiite (layered polysilicate)-polyacrylonitrile (PAN) intercalation compound through a novel process of carbothermal reduction. SiO//2 from magadiite was reduced above 1400 degree C without the formation of any crystalline oxides. On heating above 1400 degree C, both alpha - and beta -Si//3N//4 were detected, and the additional formation of alpha - and beta -SiC was observed by heating at 1600 degree C. On the other hand, the reactions for the synthesis from a magadiite-carbon mixture involved the formation of cristobalite as well as alpha - and beta -Si//3N//4, and beta -SiC. In addition, it was also indicated that the mixture was less reactive for the formation of Si//3N//4.",
    author = "Yoshiyuki Sugahara and Yasuyuki Nomizu and Kazuyuki Kuroda and Chuzo Kato",
    year = "1987",
    language = "English",
    volume = "95",
    pages = "124--129",
    journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",
    issn = "1882-0743",
    publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",
    number = "1",

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    TY - JOUR

    T1 - Si//3N//4 FORMATION IN THE CARBOTHERMAL REDUCTION PROCESS OF A MAGADIITE-POLYACRYLONITRILE INTERCALATION COMPOUND.

    AU - Sugahara, Yoshiyuki

    AU - Nomizu, Yasuyuki

    AU - Kuroda, Kazuyuki

    AU - Kato, Chuzo

    PY - 1987

    Y1 - 1987

    N2 - Silicon nitride was formed from a magadiite (layered polysilicate)-polyacrylonitrile (PAN) intercalation compound through a novel process of carbothermal reduction. SiO//2 from magadiite was reduced above 1400 degree C without the formation of any crystalline oxides. On heating above 1400 degree C, both alpha - and beta -Si//3N//4 were detected, and the additional formation of alpha - and beta -SiC was observed by heating at 1600 degree C. On the other hand, the reactions for the synthesis from a magadiite-carbon mixture involved the formation of cristobalite as well as alpha - and beta -Si//3N//4, and beta -SiC. In addition, it was also indicated that the mixture was less reactive for the formation of Si//3N//4.

    AB - Silicon nitride was formed from a magadiite (layered polysilicate)-polyacrylonitrile (PAN) intercalation compound through a novel process of carbothermal reduction. SiO//2 from magadiite was reduced above 1400 degree C without the formation of any crystalline oxides. On heating above 1400 degree C, both alpha - and beta -Si//3N//4 were detected, and the additional formation of alpha - and beta -SiC was observed by heating at 1600 degree C. On the other hand, the reactions for the synthesis from a magadiite-carbon mixture involved the formation of cristobalite as well as alpha - and beta -Si//3N//4, and beta -SiC. In addition, it was also indicated that the mixture was less reactive for the formation of Si//3N//4.

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