SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000 °c

Fengwen Mu, Tadatomo Suga, Miyuki Uomoto, Takehito Shimatsu, Kenichi Iguchi, Haruo Nakazawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A SiC-SiC temporary bonding compatible with rapid thermal annealing at \sim 1000^{\circ } \mathrm{C} has been realized. Two SiC wafers were bonded at room temperature via an intermediate Ni nano-film. After the rapid thermal annealing, the bonding was dramatically weakened and the de-bonding could be achieved at the interface. The mechanisms of this temporary bonding method has been investigated through interface analyses.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May 1
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
CountryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

Fingerprint

Rapid thermal annealing
Temperature

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Mu, F., Suga, T., Uomoto, M., Shimatsu, T., Iguchi, K., & Nakazawa, H. (2019). SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000 °c. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 [8735291] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735291

SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000 °c. / Mu, Fengwen; Suga, Tadatomo; Uomoto, Miyuki; Shimatsu, Takehito; Iguchi, Kenichi; Nakazawa, Haruo.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8735291 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mu, F, Suga, T, Uomoto, M, Shimatsu, T, Iguchi, K & Nakazawa, H 2019, SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000 °c. in Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019., 8735291, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Institute of Electrical and Electronics Engineers Inc., 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Kanazawa, Ishikawa, Japan, 19/5/21. https://doi.org/10.23919/LTB-3D.2019.8735291
Mu F, Suga T, Uomoto M, Shimatsu T, Iguchi K, Nakazawa H. SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000 °c. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8735291. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). https://doi.org/10.23919/LTB-3D.2019.8735291
Mu, Fengwen ; Suga, Tadatomo ; Uomoto, Miyuki ; Shimatsu, Takehito ; Iguchi, Kenichi ; Nakazawa, Haruo. / SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000 °c. Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).
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