SiC wafer bonding by modified suface activated bonding method

Fengwen Mu, Tadatomo Suga, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

3-inch 4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. The interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface. Furthermore, to verify the stability of the interface, the interface changes after annealing were studied.

Original languageEnglish
Title of host publicationProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
PublisherIEEE Computer Society
Number of pages1
ISBN (Print)9781479952618
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
Event2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 - Tokyo, Japan
Duration: 2014 Jul 152014 Jul 16

Publication series

NameProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014

Conference

Conference2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
CountryJapan
CityTokyo
Period14/7/1514/7/16

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ASJC Scopus subject areas

  • Filtration and Separation

Cite this

Mu, F., Suga, T., Fujino, M., Takahashi, Y., Nakazawa, H., & Iguchi, K. (2014). SiC wafer bonding by modified suface activated bonding method. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 [6886194] (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014). IEEE Computer Society. https://doi.org/10.1109/LTB-3D.2014.6886194