SiC wafer bonding by modified suface activated bonding method

Fengwen Mu, Tadatomo Suga, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

3-inch 4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. The interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface. Furthermore, to verify the stability of the interface, the interface changes after annealing were studied.

Original languageEnglish
Title of host publicationProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
PublisherIEEE Computer Society
Number of pages1
ISBN (Print)9781479952618
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
Event2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 - Tokyo, Japan
Duration: 2014 Jul 152014 Jul 16

Publication series

NameProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014

Conference

Conference2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
CountryJapan
CityTokyo
Period14/7/1514/7/16

Fingerprint

Wafer bonding
Annealing
Tensile strength
Temperature

ASJC Scopus subject areas

  • Filtration and Separation

Cite this

Mu, F., Suga, T., Fujino, M., Takahashi, Y., Nakazawa, H., & Iguchi, K. (2014). SiC wafer bonding by modified suface activated bonding method. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 [6886194] (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014). IEEE Computer Society. https://doi.org/10.1109/LTB-3D.2014.6886194

SiC wafer bonding by modified suface activated bonding method. / Mu, Fengwen; Suga, Tadatomo; Fujino, Masahisa; Takahashi, Yoshikazu; Nakazawa, Haruo; Iguchi, Kenichi.

Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society, 2014. 6886194 (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mu, F, Suga, T, Fujino, M, Takahashi, Y, Nakazawa, H & Iguchi, K 2014, SiC wafer bonding by modified suface activated bonding method. in Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014., 6886194, Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, IEEE Computer Society, 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, Tokyo, Japan, 14/7/15. https://doi.org/10.1109/LTB-3D.2014.6886194
Mu F, Suga T, Fujino M, Takahashi Y, Nakazawa H, Iguchi K. SiC wafer bonding by modified suface activated bonding method. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society. 2014. 6886194. (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014). https://doi.org/10.1109/LTB-3D.2014.6886194
Mu, Fengwen ; Suga, Tadatomo ; Fujino, Masahisa ; Takahashi, Yoshikazu ; Nakazawa, Haruo ; Iguchi, Kenichi. / SiC wafer bonding by modified suface activated bonding method. Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society, 2014. (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014).
@inproceedings{aa4060dddc094fa4a7d5bfaa73328071,
title = "SiC wafer bonding by modified suface activated bonding method",
abstract = "3-inch 4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. The interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface. Furthermore, to verify the stability of the interface, the interface changes after annealing were studied.",
author = "Fengwen Mu and Tadatomo Suga and Masahisa Fujino and Yoshikazu Takahashi and Haruo Nakazawa and Kenichi Iguchi",
year = "2014",
month = "1",
day = "1",
doi = "10.1109/LTB-3D.2014.6886194",
language = "English",
isbn = "9781479952618",
series = "Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014",
publisher = "IEEE Computer Society",
booktitle = "Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014",

}

TY - GEN

T1 - SiC wafer bonding by modified suface activated bonding method

AU - Mu, Fengwen

AU - Suga, Tadatomo

AU - Fujino, Masahisa

AU - Takahashi, Yoshikazu

AU - Nakazawa, Haruo

AU - Iguchi, Kenichi

PY - 2014/1/1

Y1 - 2014/1/1

N2 - 3-inch 4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. The interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface. Furthermore, to verify the stability of the interface, the interface changes after annealing were studied.

AB - 3-inch 4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. The interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface. Furthermore, to verify the stability of the interface, the interface changes after annealing were studied.

UR - http://www.scopus.com/inward/record.url?scp=84906970270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906970270&partnerID=8YFLogxK

U2 - 10.1109/LTB-3D.2014.6886194

DO - 10.1109/LTB-3D.2014.6886194

M3 - Conference contribution

AN - SCOPUS:84906970270

SN - 9781479952618

T3 - Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014

BT - Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014

PB - IEEE Computer Society

ER -