SiC wafer bonding using surface activation method for power device

Fengwen Mu, Masahisa Fujino, Tadatomo Suga, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and composition as well as the effects of rapid thermal annealing (RTA). Compared with that obtained by standard SAB, the bonding interface of modified SAB with a Si-containing Ar ion beam could be ∼30% stronger and almost completely recrystallized by RTA without oxidation. The advantages of modified SAB with a Si-containing Ar ion beam are attributed to the assumed in-situ Si-compensation during surface activation.

Original languageEnglish
Title of host publication18th International Conference on Electronic Packaging Technology, ICEPT 2017
EditorsChenxi Wang, Yanhong Tian, Tianchun Ye
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages660-663
Number of pages4
ISBN (Electronic)9781538629727
DOIs
Publication statusPublished - 2017 Sep 19
Externally publishedYes
Event18th International Conference on Electronic Packaging Technology, ICEPT 2017 - Harbin, China
Duration: 2017 Aug 162017 Aug 19

Publication series

Name18th International Conference on Electronic Packaging Technology, ICEPT 2017

Conference

Conference18th International Conference on Electronic Packaging Technology, ICEPT 2017
CountryChina
CityHarbin
Period17/8/1617/8/19

Fingerprint

Wafer bonding
Chemical activation
Ion beams
Rapid thermal annealing
Oxidation
Chemical analysis

Keywords

  • interface
  • power device
  • SiC
  • surface activation
  • wafer bonding

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Polymers and Plastics
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Mu, F., Fujino, M., Suga, T., Iguchi, K., Nakazawa, H., & Takahashi, Y. (2017). SiC wafer bonding using surface activation method for power device. In C. Wang, Y. Tian, & T. Ye (Eds.), 18th International Conference on Electronic Packaging Technology, ICEPT 2017 (pp. 660-663). [8046538] (18th International Conference on Electronic Packaging Technology, ICEPT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEPT.2017.8046538

SiC wafer bonding using surface activation method for power device. / Mu, Fengwen; Fujino, Masahisa; Suga, Tadatomo; Iguchi, Kenichi; Nakazawa, Haruo; Takahashi, Yoshikazu.

18th International Conference on Electronic Packaging Technology, ICEPT 2017. ed. / Chenxi Wang; Yanhong Tian; Tianchun Ye. Institute of Electrical and Electronics Engineers Inc., 2017. p. 660-663 8046538 (18th International Conference on Electronic Packaging Technology, ICEPT 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mu, F, Fujino, M, Suga, T, Iguchi, K, Nakazawa, H & Takahashi, Y 2017, SiC wafer bonding using surface activation method for power device. in C Wang, Y Tian & T Ye (eds), 18th International Conference on Electronic Packaging Technology, ICEPT 2017., 8046538, 18th International Conference on Electronic Packaging Technology, ICEPT 2017, Institute of Electrical and Electronics Engineers Inc., pp. 660-663, 18th International Conference on Electronic Packaging Technology, ICEPT 2017, Harbin, China, 17/8/16. https://doi.org/10.1109/ICEPT.2017.8046538
Mu F, Fujino M, Suga T, Iguchi K, Nakazawa H, Takahashi Y. SiC wafer bonding using surface activation method for power device. In Wang C, Tian Y, Ye T, editors, 18th International Conference on Electronic Packaging Technology, ICEPT 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 660-663. 8046538. (18th International Conference on Electronic Packaging Technology, ICEPT 2017). https://doi.org/10.1109/ICEPT.2017.8046538
Mu, Fengwen ; Fujino, Masahisa ; Suga, Tadatomo ; Iguchi, Kenichi ; Nakazawa, Haruo ; Takahashi, Yoshikazu. / SiC wafer bonding using surface activation method for power device. 18th International Conference on Electronic Packaging Technology, ICEPT 2017. editor / Chenxi Wang ; Yanhong Tian ; Tianchun Ye. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 660-663 (18th International Conference on Electronic Packaging Technology, ICEPT 2017).
@inproceedings{a539014422b24ff7aba6fa46addfe323,
title = "SiC wafer bonding using surface activation method for power device",
abstract = "This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and composition as well as the effects of rapid thermal annealing (RTA). Compared with that obtained by standard SAB, the bonding interface of modified SAB with a Si-containing Ar ion beam could be ∼30{\%} stronger and almost completely recrystallized by RTA without oxidation. The advantages of modified SAB with a Si-containing Ar ion beam are attributed to the assumed in-situ Si-compensation during surface activation.",
keywords = "interface, power device, SiC, surface activation, wafer bonding",
author = "Fengwen Mu and Masahisa Fujino and Tadatomo Suga and Kenichi Iguchi and Haruo Nakazawa and Yoshikazu Takahashi",
year = "2017",
month = "9",
day = "19",
doi = "10.1109/ICEPT.2017.8046538",
language = "English",
series = "18th International Conference on Electronic Packaging Technology, ICEPT 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "660--663",
editor = "Chenxi Wang and Yanhong Tian and Tianchun Ye",
booktitle = "18th International Conference on Electronic Packaging Technology, ICEPT 2017",

}

TY - GEN

T1 - SiC wafer bonding using surface activation method for power device

AU - Mu, Fengwen

AU - Fujino, Masahisa

AU - Suga, Tadatomo

AU - Iguchi, Kenichi

AU - Nakazawa, Haruo

AU - Takahashi, Yoshikazu

PY - 2017/9/19

Y1 - 2017/9/19

N2 - This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and composition as well as the effects of rapid thermal annealing (RTA). Compared with that obtained by standard SAB, the bonding interface of modified SAB with a Si-containing Ar ion beam could be ∼30% stronger and almost completely recrystallized by RTA without oxidation. The advantages of modified SAB with a Si-containing Ar ion beam are attributed to the assumed in-situ Si-compensation during surface activation.

AB - This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and composition as well as the effects of rapid thermal annealing (RTA). Compared with that obtained by standard SAB, the bonding interface of modified SAB with a Si-containing Ar ion beam could be ∼30% stronger and almost completely recrystallized by RTA without oxidation. The advantages of modified SAB with a Si-containing Ar ion beam are attributed to the assumed in-situ Si-compensation during surface activation.

KW - interface

KW - power device

KW - SiC

KW - surface activation

KW - wafer bonding

UR - http://www.scopus.com/inward/record.url?scp=85032802995&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85032802995&partnerID=8YFLogxK

U2 - 10.1109/ICEPT.2017.8046538

DO - 10.1109/ICEPT.2017.8046538

M3 - Conference contribution

T3 - 18th International Conference on Electronic Packaging Technology, ICEPT 2017

SP - 660

EP - 663

BT - 18th International Conference on Electronic Packaging Technology, ICEPT 2017

A2 - Wang, Chenxi

A2 - Tian, Yanhong

A2 - Ye, Tianchun

PB - Institute of Electrical and Electronics Engineers Inc.

ER -