SiC wafer bonding using surface activation method for power device

Fengwen Mu, Masahisa Fujino, Tadatomo Suga, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and composition as well as the effects of rapid thermal annealing (RTA). Compared with that obtained by standard SAB, the bonding interface of modified SAB with a Si-containing Ar ion beam could be ∼30% stronger and almost completely recrystallized by RTA without oxidation. The advantages of modified SAB with a Si-containing Ar ion beam are attributed to the assumed in-situ Si-compensation during surface activation.

Original languageEnglish
Title of host publication18th International Conference on Electronic Packaging Technology, ICEPT 2017
EditorsChenxi Wang, Yanhong Tian, Tianchun Ye
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages660-663
Number of pages4
ISBN (Electronic)9781538629727
DOIs
Publication statusPublished - 2017 Sep 19
Externally publishedYes
Event18th International Conference on Electronic Packaging Technology, ICEPT 2017 - Harbin, China
Duration: 2017 Aug 162017 Aug 19

Publication series

Name18th International Conference on Electronic Packaging Technology, ICEPT 2017

Conference

Conference18th International Conference on Electronic Packaging Technology, ICEPT 2017
CountryChina
CityHarbin
Period17/8/1617/8/19

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Keywords

  • interface
  • power device
  • SiC
  • surface activation
  • wafer bonding

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Polymers and Plastics
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Mu, F., Fujino, M., Suga, T., Iguchi, K., Nakazawa, H., & Takahashi, Y. (2017). SiC wafer bonding using surface activation method for power device. In C. Wang, Y. Tian, & T. Ye (Eds.), 18th International Conference on Electronic Packaging Technology, ICEPT 2017 (pp. 660-663). [8046538] (18th International Conference on Electronic Packaging Technology, ICEPT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEPT.2017.8046538