Abstract
300 keV Xe ions were implanted in single crystals of ZnO at room temperature with three fluences viz. 4.9×1015, 8.1×1015 and 1.1×1016 ions/cm2. The Xe ion implanted ZnO samples were characterized by UV-Vis spectroscopy, X-ray photo-electron spectroscopy (XPS) and SQUID magnetometer. It has been noticed that the samples implanted with lowest and highest ion fluences show magnetization higher than that in the sample implanted with intermediate ion fluence. This unusual trend in the change of the magnetization is attributed to the lattice distortion and the variation in the lattice oxygen concentration as evidenced from the core level XPS results. The results are explained in terms of oxygen vacancies mediated bound magnetic polarons (BMP) and ion induced effects on their formation.
| Original language | English |
|---|---|
| Pages (from-to) | 8494-8499 |
| Number of pages | 6 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 17 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2017 |
| Externally published | Yes |
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Keywords
- Implantation
- Magnetism
- X-ray Photoelectron Spectroscopy
- Xe Doping
- ZnO
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics
Cite this
Signature of Magnetization in Xe Ions Implanted ZnO : Correlation with Oxygen Defects as Probed by Photoelectron Spectroscopy. / Mishra, D. K.; Pattanaik, Shreenu; Dash, Sibashisa; Sharma, Manoj Kumar; Kumar, Pravin; Ray, Sekhar C.; Chatterjee, Ratnamala; Kanjilal, D.
In: Journal of Nanoscience and Nanotechnology, Vol. 17, No. 11, 2017, p. 8494-8499.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Signature of Magnetization in Xe Ions Implanted ZnO
T2 - Correlation with Oxygen Defects as Probed by Photoelectron Spectroscopy
AU - Mishra, D. K.
AU - Pattanaik, Shreenu
AU - Dash, Sibashisa
AU - Sharma, Manoj Kumar
AU - Kumar, Pravin
AU - Ray, Sekhar C.
AU - Chatterjee, Ratnamala
AU - Kanjilal, D.
PY - 2017
Y1 - 2017
N2 - 300 keV Xe ions were implanted in single crystals of ZnO at room temperature with three fluences viz. 4.9×1015, 8.1×1015 and 1.1×1016 ions/cm2. The Xe ion implanted ZnO samples were characterized by UV-Vis spectroscopy, X-ray photo-electron spectroscopy (XPS) and SQUID magnetometer. It has been noticed that the samples implanted with lowest and highest ion fluences show magnetization higher than that in the sample implanted with intermediate ion fluence. This unusual trend in the change of the magnetization is attributed to the lattice distortion and the variation in the lattice oxygen concentration as evidenced from the core level XPS results. The results are explained in terms of oxygen vacancies mediated bound magnetic polarons (BMP) and ion induced effects on their formation.
AB - 300 keV Xe ions were implanted in single crystals of ZnO at room temperature with three fluences viz. 4.9×1015, 8.1×1015 and 1.1×1016 ions/cm2. The Xe ion implanted ZnO samples were characterized by UV-Vis spectroscopy, X-ray photo-electron spectroscopy (XPS) and SQUID magnetometer. It has been noticed that the samples implanted with lowest and highest ion fluences show magnetization higher than that in the sample implanted with intermediate ion fluence. This unusual trend in the change of the magnetization is attributed to the lattice distortion and the variation in the lattice oxygen concentration as evidenced from the core level XPS results. The results are explained in terms of oxygen vacancies mediated bound magnetic polarons (BMP) and ion induced effects on their formation.
KW - Implantation
KW - Magnetism
KW - X-ray Photoelectron Spectroscopy
KW - Xe Doping
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=85027418715&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85027418715&partnerID=8YFLogxK
U2 - 10.1166/jnn.2017.15179
DO - 10.1166/jnn.2017.15179
M3 - Article
AN - SCOPUS:85027418715
VL - 17
SP - 8494
EP - 8499
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 11
ER -