Signature of Magnetization in Xe Ions Implanted ZnO: Correlation with Oxygen Defects as Probed by Photoelectron Spectroscopy

D. K. Mishra; Shreenu Pattanaik; Sibashisa Dash; Manoj Kumar Sharma; Pravin Kumar; Sekhar C. Ray; Ratnamala Chatterjee; D. Kanjilal

doi:10.1166/jnn.2017.15179

Signature of Magnetization in Xe Ions Implanted ZnO: Correlation with Oxygen Defects as Probed by Photoelectron Spectroscopy

D. K. Mishra^*, Shreenu Pattanaik, Sibashisa Dash, Manoj Kumar Sharma, Pravin Kumar, Sekhar C. Ray, Ratnamala Chatterjee, D. Kanjilal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

300 keV Xe ions were implanted in single crystals of ZnO at room temperature with three fluences viz. 4.9×10¹⁵, 8.1×10¹⁵ and 1.1×10¹⁶ ions/cm². The Xe ion implanted ZnO samples were characterized by UV-Vis spectroscopy, X-ray photo-electron spectroscopy (XPS) and SQUID magnetometer. It has been noticed that the samples implanted with lowest and highest ion fluences show magnetization higher than that in the sample implanted with intermediate ion fluence. This unusual trend in the change of the magnetization is attributed to the lattice distortion and the variation in the lattice oxygen concentration as evidenced from the core level XPS results. The results are explained in terms of oxygen vacancies mediated bound magnetic polarons (BMP) and ion induced effects on their formation.

Original language	English
Pages (from-to)	8494-8499
Number of pages	6
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	11
DOIs	https://doi.org/10.1166/jnn.2017.15179
Publication status	Published - 2017
Externally published	Yes

Keywords

Implantation
Magnetism
X-ray Photoelectron Spectroscopy
Xe Doping
ZnO

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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@article{82edb084a3e5413fa7b314d38096e509,

title = "Signature of Magnetization in Xe Ions Implanted ZnO: Correlation with Oxygen Defects as Probed by Photoelectron Spectroscopy",

abstract = "300 keV Xe ions were implanted in single crystals of ZnO at room temperature with three fluences viz. 4.9×1015, 8.1×1015 and 1.1×1016 ions/cm2. The Xe ion implanted ZnO samples were characterized by UV-Vis spectroscopy, X-ray photo-electron spectroscopy (XPS) and SQUID magnetometer. It has been noticed that the samples implanted with lowest and highest ion fluences show magnetization higher than that in the sample implanted with intermediate ion fluence. This unusual trend in the change of the magnetization is attributed to the lattice distortion and the variation in the lattice oxygen concentration as evidenced from the core level XPS results. The results are explained in terms of oxygen vacancies mediated bound magnetic polarons (BMP) and ion induced effects on their formation.",

keywords = "Implantation, Magnetism, X-ray Photoelectron Spectroscopy, Xe Doping, ZnO",

author = "Mishra, {D. K.} and Shreenu Pattanaik and Sibashisa Dash and Sharma, {Manoj Kumar} and Pravin Kumar and Ray, {Sekhar C.} and Ratnamala Chatterjee and D. Kanjilal",

year = "2017",

doi = "10.1166/jnn.2017.15179",

language = "English",

volume = "17",

pages = "8494--8499",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "11",

}

TY - JOUR

T1 - Signature of Magnetization in Xe Ions Implanted ZnO

T2 - Correlation with Oxygen Defects as Probed by Photoelectron Spectroscopy

AU - Mishra, D. K.

AU - Pattanaik, Shreenu

AU - Dash, Sibashisa

AU - Sharma, Manoj Kumar

AU - Kumar, Pravin

AU - Ray, Sekhar C.

AU - Chatterjee, Ratnamala

AU - Kanjilal, D.

PY - 2017

Y1 - 2017

N2 - 300 keV Xe ions were implanted in single crystals of ZnO at room temperature with three fluences viz. 4.9×1015, 8.1×1015 and 1.1×1016 ions/cm2. The Xe ion implanted ZnO samples were characterized by UV-Vis spectroscopy, X-ray photo-electron spectroscopy (XPS) and SQUID magnetometer. It has been noticed that the samples implanted with lowest and highest ion fluences show magnetization higher than that in the sample implanted with intermediate ion fluence. This unusual trend in the change of the magnetization is attributed to the lattice distortion and the variation in the lattice oxygen concentration as evidenced from the core level XPS results. The results are explained in terms of oxygen vacancies mediated bound magnetic polarons (BMP) and ion induced effects on their formation.

AB - 300 keV Xe ions were implanted in single crystals of ZnO at room temperature with three fluences viz. 4.9×1015, 8.1×1015 and 1.1×1016 ions/cm2. The Xe ion implanted ZnO samples were characterized by UV-Vis spectroscopy, X-ray photo-electron spectroscopy (XPS) and SQUID magnetometer. It has been noticed that the samples implanted with lowest and highest ion fluences show magnetization higher than that in the sample implanted with intermediate ion fluence. This unusual trend in the change of the magnetization is attributed to the lattice distortion and the variation in the lattice oxygen concentration as evidenced from the core level XPS results. The results are explained in terms of oxygen vacancies mediated bound magnetic polarons (BMP) and ion induced effects on their formation.

KW - Implantation

KW - Magnetism

KW - X-ray Photoelectron Spectroscopy

KW - Xe Doping

KW - ZnO

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U2 - 10.1166/jnn.2017.15179

DO - 10.1166/jnn.2017.15179

M3 - Article

AN - SCOPUS:85027418715

VL - 17

SP - 8494

EP - 8499

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 11

ER -

Signature of Magnetization in Xe Ions Implanted ZnO: Correlation with Oxygen Defects as Probed by Photoelectron Spectroscopy

Abstract

Keywords

ASJC Scopus subject areas

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