Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8

M. Numata, M. Kanamori, M. Sugiura, A. Fuwa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    Si2Cl6 and Si3Cl8 were used as feed materials for silicon precipitation reaction. The precipitation reaction was conducted on non-crystalline quartz glass substrate in chemical control region using a horizontal cold wall reactor of atmospheric pressure at temperatures from 873 to 1273 K. The feed gas was diluted by hydrogen and/argon to 0.1 to 0.3 volume percent. The precipitation rate was measured under various experimental conditions of temperatures, feed concentrations and flow rates. The precipitate morphology was observed by X-ray diffraction analysis and SEM. The experimental precipitation rate was made of functions of temperature and feed concentration: i.e. in the surface reaction controlled region (873-1073 K), the rate dependence in Si2Cl6 -H2-Ar system was proportional to 1/2 order of Si2Cl6 the former and to the first order of H2. A plausible reaction mechanism is presented in which the reaction intermediate of SiCl2 is employed. From the XRD and SEM results, those precipitated at 1073 K using either feed materials have preferred crystal orientation of (110) direction.

    Original languageEnglish
    Title of host publicationFirst International Conference on Processing Materials for Properties
    Place of PublicationWarrendale, PA, United States
    PublisherPubl by Minerals, Metals & Materials Soc (TMS)
    Pages1249-1252
    Number of pages4
    ISBN (Print)0873392566
    Publication statusPublished - 1993
    EventProceedings of the 1st International Conference on Processing Materials for Properties - Honolulu, HI, USA
    Duration: 1993 Nov 71993 Nov 10

    Other

    OtherProceedings of the 1st International Conference on Processing Materials for Properties
    CityHonolulu, HI, USA
    Period93/11/793/11/10

    Fingerprint

    Chemical vapor deposition
    Silicon
    Reaction intermediates
    Scanning electron microscopy
    Surface reactions
    Crystal orientation
    Temperature
    X ray diffraction analysis
    Atmospheric pressure
    Argon
    Precipitates
    Quartz
    Flow rate
    Glass
    Hydrogen
    Substrates
    Gases

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Numata, M., Kanamori, M., Sugiura, M., & Fuwa, A. (1993). Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8 In First International Conference on Processing Materials for Properties (pp. 1249-1252). Warrendale, PA, United States: Publ by Minerals, Metals & Materials Soc (TMS).

    Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8 . / Numata, M.; Kanamori, M.; Sugiura, M.; Fuwa, A.

    First International Conference on Processing Materials for Properties. Warrendale, PA, United States : Publ by Minerals, Metals & Materials Soc (TMS), 1993. p. 1249-1252.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Numata, M, Kanamori, M, Sugiura, M & Fuwa, A 1993, Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8 in First International Conference on Processing Materials for Properties. Publ by Minerals, Metals & Materials Soc (TMS), Warrendale, PA, United States, pp. 1249-1252, Proceedings of the 1st International Conference on Processing Materials for Properties, Honolulu, HI, USA, 93/11/7.
    Numata M, Kanamori M, Sugiura M, Fuwa A. Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8 In First International Conference on Processing Materials for Properties. Warrendale, PA, United States: Publ by Minerals, Metals & Materials Soc (TMS). 1993. p. 1249-1252
    Numata, M. ; Kanamori, M. ; Sugiura, M. ; Fuwa, A. / Silicon chemical vapor deposition from Si2Cl6 and Si3 Cl8 First International Conference on Processing Materials for Properties. Warrendale, PA, United States : Publ by Minerals, Metals & Materials Soc (TMS), 1993. pp. 1249-1252
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    N2 - Si2Cl6 and Si3Cl8 were used as feed materials for silicon precipitation reaction. The precipitation reaction was conducted on non-crystalline quartz glass substrate in chemical control region using a horizontal cold wall reactor of atmospheric pressure at temperatures from 873 to 1273 K. The feed gas was diluted by hydrogen and/argon to 0.1 to 0.3 volume percent. The precipitation rate was measured under various experimental conditions of temperatures, feed concentrations and flow rates. The precipitate morphology was observed by X-ray diffraction analysis and SEM. The experimental precipitation rate was made of functions of temperature and feed concentration: i.e. in the surface reaction controlled region (873-1073 K), the rate dependence in Si2Cl6 -H2-Ar system was proportional to 1/2 order of Si2Cl6 the former and to the first order of H2. A plausible reaction mechanism is presented in which the reaction intermediate of SiCl2 is employed. From the XRD and SEM results, those precipitated at 1073 K using either feed materials have preferred crystal orientation of (110) direction.

    AB - Si2Cl6 and Si3Cl8 were used as feed materials for silicon precipitation reaction. The precipitation reaction was conducted on non-crystalline quartz glass substrate in chemical control region using a horizontal cold wall reactor of atmospheric pressure at temperatures from 873 to 1273 K. The feed gas was diluted by hydrogen and/argon to 0.1 to 0.3 volume percent. The precipitation rate was measured under various experimental conditions of temperatures, feed concentrations and flow rates. The precipitate morphology was observed by X-ray diffraction analysis and SEM. The experimental precipitation rate was made of functions of temperature and feed concentration: i.e. in the surface reaction controlled region (873-1073 K), the rate dependence in Si2Cl6 -H2-Ar system was proportional to 1/2 order of Si2Cl6 the former and to the first order of H2. A plausible reaction mechanism is presented in which the reaction intermediate of SiCl2 is employed. From the XRD and SEM results, those precipitated at 1073 K using either feed materials have preferred crystal orientation of (110) direction.

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