Silicon electrodeposition in water-soluble KF-KCl molten salt: Investigations on the reduction of Si(IV) ions

Kazuma Maeda; Kouji Yasuda; Toshiyuki Nohira; Rika Hagiwara; Takayuki Homma

doi:10.1149/2.0441509jes

Silicon electrodeposition in water-soluble KF-KCl molten salt: Investigations on the reduction of Si(IV) ions

Kazuma Maeda, Kouji Yasuda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

A new method for electroplating Si using a water-soluble KF-KCl molten salt electrolyte and high-purity gaseous SiCl₄ has been proposed. To gain a fundamental understanding of the process, the electrodeposition of Si from Si(IV) complex ions on a Ag electrode in a molten KF-KCl-K₂SiF₆ system was investigated by cyclic voltammetry at 923 K. The reduction of Si(IV) ions to metallic Si was observed as a single 4-electron wave, which is explained by an E_qE_r (quasireversible-reversible electron transfer reactions) mechanism. The diffusion coefficient of the Si(IV) ions in the electrolyte was determined to be 3.2 × 10^-5 cm² s^-1 at 923 K by chronoamperometry.

Original language	English
Pages (from-to)	D444-D448
Journal	Journal of the Electrochemical Society
Volume	162
Issue number	9
DOIs	https://doi.org/10.1149/2.0441509jes
Publication status	Published - 2015 Jun 26

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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abstract = "A new method for electroplating Si using a water-soluble KF-KCl molten salt electrolyte and high-purity gaseous SiCl4 has been proposed. To gain a fundamental understanding of the process, the electrodeposition of Si from Si(IV) complex ions on a Ag electrode in a molten KF-KCl-K2SiF6 system was investigated by cyclic voltammetry at 923 K. The reduction of Si(IV) ions to metallic Si was observed as a single 4-electron wave, which is explained by an EqEr (quasireversible-reversible electron transfer reactions) mechanism. The diffusion coefficient of the Si(IV) ions in the electrolyte was determined to be 3.2 × 10-5 cm2 s-1 at 923 K by chronoamperometry.",

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AU - Maeda, Kazuma

AU - Yasuda, Kouji

AU - Nohira, Toshiyuki

AU - Hagiwara, Rika

AU - Homma, Takayuki

PY - 2015/6/26

Y1 - 2015/6/26

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AB - A new method for electroplating Si using a water-soluble KF-KCl molten salt electrolyte and high-purity gaseous SiCl4 has been proposed. To gain a fundamental understanding of the process, the electrodeposition of Si from Si(IV) complex ions on a Ag electrode in a molten KF-KCl-K2SiF6 system was investigated by cyclic voltammetry at 923 K. The reduction of Si(IV) ions to metallic Si was observed as a single 4-electron wave, which is explained by an EqEr (quasireversible-reversible electron transfer reactions) mechanism. The diffusion coefficient of the Si(IV) ions in the electrolyte was determined to be 3.2 × 10-5 cm2 s-1 at 923 K by chronoamperometry.

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Silicon electrodeposition in water-soluble KF-KCl molten salt: Investigations on the reduction of Si(IV) ions

Abstract

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