Silicon electrodeposition in water-soluble KF-KCl molten salt: Investigations on the reduction of Si(IV) ions

Kazuma Maeda, Kouji Yasuda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

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    25 Citations (Scopus)

    Abstract

    A new method for electroplating Si using a water-soluble KF-KCl molten salt electrolyte and high-purity gaseous SiCl<inf>4</inf> has been proposed. To gain a fundamental understanding of the process, the electrodeposition of Si from Si(IV) complex ions on a Ag electrode in a molten KF-KCl-K<inf>2</inf>SiF<inf>6</inf> system was investigated by cyclic voltammetry at 923 K. The reduction of Si(IV) ions to metallic Si was observed as a single 4-electron wave, which is explained by an E<inf>q</inf>E<inf>r</inf> (quasireversible-reversible electron transfer reactions) mechanism. The diffusion coefficient of the Si(IV) ions in the electrolyte was determined to be 3.2 × 10<sup>-5</sup> cm<sup>2</sup> s<sup>-1</sup> at 923 K by chronoamperometry.

    Original languageEnglish
    Pages (from-to)D444-D448
    JournalJournal of the Electrochemical Society
    Volume162
    Issue number9
    DOIs
    Publication statusPublished - 2015 Jun 26

    ASJC Scopus subject areas

    • Electrochemistry
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Renewable Energy, Sustainability and the Environment
    • Condensed Matter Physics

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