Silicon electrodeposition in water-soluble KF-KCl molten salt: Optimization of electrolysis conditions at 923 K

Kouji Yasuda, Kazuma Maeda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

To establish a new Si-electrodeposition process, the optimum conditions for obtaining adherent, compact, and smooth Si films using molten KF-KCl-K2SiF6 were investigated at 923 K. Galvanostatic electrolysis was conducted on a Ag substrate in eutectic KF-KCl (45:55 mol%) with various current densities (10-500 mA cm-2) and K2SiF6 concentrations (0.5-5.0 mol%). Cross-sectional scanning electron microscopy (SEM) of the deposits revealed that compact and smooth Si films form at intermediate K2SiF6 concentrations and current densities. The relationship between the deposition conditions and Si morphology is discussed in terms of the electrodeposition mechanism.

Original languageEnglish
Pages (from-to)D95-D99
JournalJournal of the Electrochemical Society
Volume163
Issue number3
DOIs
Publication statusPublished - 2016

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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