Silicon oxidation by ozone

Christian K. Fink, Ken Nakamura, Shingo Ichimura, Stephen J. Jenkins

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Understanding the oxidation of silicon has been an ongoing challenge for many decades. Ozone has recently received considerable attention as an alternative oxidant in the low temperature, damage-free oxidation of silicon. The ozone-grown oxide was also found to exhibit improved interface and electrical characteristics over a conventionally dioxygen-grown oxide. In this review article, we summarize the key findings about this alternative oxidation process. We discuss the different methods of O3 generation, and the advantages of the ozone-grown Si/SiO2 interface. An understanding of the growth characteristics is of utmost importance for obtaining control over this alternative oxidation process.

Original languageEnglish
Article number183001
JournalJournal of Physics Condensed Matter
Volume21
Issue number18
DOIs
Publication statusPublished - 2009 May 11
Externally publishedYes

Fingerprint

Ozone
Silicon
ozone
Oxidation
oxidation
silicon
Oxides
oxides
Oxidants
Oxygen
damage
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Silicon oxidation by ozone. / Fink, Christian K.; Nakamura, Ken; Ichimura, Shingo; Jenkins, Stephen J.

In: Journal of Physics Condensed Matter, Vol. 21, No. 18, 183001, 11.05.2009.

Research output: Contribution to journalArticle

Fink, Christian K. ; Nakamura, Ken ; Ichimura, Shingo ; Jenkins, Stephen J. / Silicon oxidation by ozone. In: Journal of Physics Condensed Matter. 2009 ; Vol. 21, No. 18.
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