Silicon oxynitride waveguides for optoelectronic integrated circuits

O. P. Agnihotri, Rajeev Tyagi, Isamu Kato

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Planar optical waveguides on p-type Si wafers have been fabricated by a photo-induced deposition process. Silicon oxynitride was deposited using a gaseous mixture of SiH4 (2% in Ar), NH3 and N2O under 253.7 nm UV radiation. The oxynitride composition was varied by changing N2O: (N2O + NH3) ratio while keeping N2O + NH3 and SiH4 flow rates constant. The refractive index varied from 1.46 to 1.95. The optical energy gap increased from 4.8 to 5.7 as the flow rate ratio varied from 0 to 0.25. Si-N bond shifts to higher energy owing to the incorporation of oxygen. A planar waveguide structure was fabricated using thermally grown SiO2 buffer layer of 1.1 μm thickness. The loss was estimated to be 1.1 dB/cm for TE0 mode at 632.8nm. The accuracy of measurements is 0.02 dB/cm.

Original languageEnglish
Pages (from-to)6711-6713
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number11
Publication statusPublished - 1997 Nov

Fingerprint

Integrated optoelectronics
Planar waveguides
oxynitrides
integrated circuits
Waveguides
flow velocity
Flow rate
waveguides
Silicon
Optical waveguides
silicon
Buffer layers
optical waveguides
Ultraviolet radiation
Rate constants
Refractive index
Energy gap
buffers
wafers
refractivity

Keywords

  • Optical waveguides
  • Photo CVD
  • Silicon oxynitride

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Silicon oxynitride waveguides for optoelectronic integrated circuits. / Agnihotri, O. P.; Tyagi, Rajeev; Kato, Isamu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 11, 11.1997, p. 6711-6713.

Research output: Contribution to journalArticle

@article{64abbe24d19240019f49bd57db421568,
title = "Silicon oxynitride waveguides for optoelectronic integrated circuits",
abstract = "Planar optical waveguides on p-type Si wafers have been fabricated by a photo-induced deposition process. Silicon oxynitride was deposited using a gaseous mixture of SiH4 (2{\%} in Ar), NH3 and N2O under 253.7 nm UV radiation. The oxynitride composition was varied by changing N2O: (N2O + NH3) ratio while keeping N2O + NH3 and SiH4 flow rates constant. The refractive index varied from 1.46 to 1.95. The optical energy gap increased from 4.8 to 5.7 as the flow rate ratio varied from 0 to 0.25. Si-N bond shifts to higher energy owing to the incorporation of oxygen. A planar waveguide structure was fabricated using thermally grown SiO2 buffer layer of 1.1 μm thickness. The loss was estimated to be 1.1 dB/cm for TE0 mode at 632.8nm. The accuracy of measurements is 0.02 dB/cm.",
keywords = "Optical waveguides, Photo CVD, Silicon oxynitride",
author = "Agnihotri, {O. P.} and Rajeev Tyagi and Isamu Kato",
year = "1997",
month = "11",
language = "English",
volume = "36",
pages = "6711--6713",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "11",

}

TY - JOUR

T1 - Silicon oxynitride waveguides for optoelectronic integrated circuits

AU - Agnihotri, O. P.

AU - Tyagi, Rajeev

AU - Kato, Isamu

PY - 1997/11

Y1 - 1997/11

N2 - Planar optical waveguides on p-type Si wafers have been fabricated by a photo-induced deposition process. Silicon oxynitride was deposited using a gaseous mixture of SiH4 (2% in Ar), NH3 and N2O under 253.7 nm UV radiation. The oxynitride composition was varied by changing N2O: (N2O + NH3) ratio while keeping N2O + NH3 and SiH4 flow rates constant. The refractive index varied from 1.46 to 1.95. The optical energy gap increased from 4.8 to 5.7 as the flow rate ratio varied from 0 to 0.25. Si-N bond shifts to higher energy owing to the incorporation of oxygen. A planar waveguide structure was fabricated using thermally grown SiO2 buffer layer of 1.1 μm thickness. The loss was estimated to be 1.1 dB/cm for TE0 mode at 632.8nm. The accuracy of measurements is 0.02 dB/cm.

AB - Planar optical waveguides on p-type Si wafers have been fabricated by a photo-induced deposition process. Silicon oxynitride was deposited using a gaseous mixture of SiH4 (2% in Ar), NH3 and N2O under 253.7 nm UV radiation. The oxynitride composition was varied by changing N2O: (N2O + NH3) ratio while keeping N2O + NH3 and SiH4 flow rates constant. The refractive index varied from 1.46 to 1.95. The optical energy gap increased from 4.8 to 5.7 as the flow rate ratio varied from 0 to 0.25. Si-N bond shifts to higher energy owing to the incorporation of oxygen. A planar waveguide structure was fabricated using thermally grown SiO2 buffer layer of 1.1 μm thickness. The loss was estimated to be 1.1 dB/cm for TE0 mode at 632.8nm. The accuracy of measurements is 0.02 dB/cm.

KW - Optical waveguides

KW - Photo CVD

KW - Silicon oxynitride

UR - http://www.scopus.com/inward/record.url?scp=0031274453&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031274453&partnerID=8YFLogxK

M3 - Article

VL - 36

SP - 6711

EP - 6713

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 11

ER -