Similarities in the optical properties of hexagonal and cubic InGaN quantum wells

S. F. Chichibu; M. Sugiyama; T. Onuma; T. Kuroda; A. Tackeuchi; T. Sota; T. Kitamura; H. Nakanishi; Y. Ishida; H. Okumura; S. Keller; U. K. Mishra; S. P. DenBaars; S. Nakamura

Similarities in the optical properties of hexagonal and cubic InGaN quantum wells

S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kuroda, A. Tackeuchi, T. Sota, T. Kitamura, H. Nakanishi, Y. Ishida, H. Okumura, S. Keller, U. K. Mishra, S. P. DenBaars, S. Nakamura

Research output: Contribution to journal › Article › peer-review

Abstract

Optical properties of fully-strained wurtzite and zincblende In_xGa_1-xN/GaN multiple quantum well (MQW) structures were compared to discuss the origin of exciton localization. In contrast to the hexagonal InGaN MQWs, the photoluminescence (PL) peak energy of cubic InGaN MQWs showed a moderate blueshift with decreasing well thickness, L, and low-temperature PL decay time of the cubic MQWs did not depend strongly on L. The results imply that the wavefunction overlap in cubic InGaN MQWs was not reduced compared to the hexagonal ones, since they do not suffer from the electric field normal to the QW plane due either to spontaneous or piezoelectric polarization. Both MQWs exhibited a large and composition-dependent bandgap bowing, and time-resolved PL (TR-PL) signals showed a stretched-exponential decay even at room temperature. The exciton localization is considered to be an intrinsic property of InGaN.

Original language	English
Pages (from-to)	481-486
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	693
Publication status	Published - 2002 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Similarities in the optical properties of hexagonal and cubic InGaN quantum wells",

abstract = "Optical properties of fully-strained wurtzite and zincblende InxGa1-xN/GaN multiple quantum well (MQW) structures were compared to discuss the origin of exciton localization. In contrast to the hexagonal InGaN MQWs, the photoluminescence (PL) peak energy of cubic InGaN MQWs showed a moderate blueshift with decreasing well thickness, L, and low-temperature PL decay time of the cubic MQWs did not depend strongly on L. The results imply that the wavefunction overlap in cubic InGaN MQWs was not reduced compared to the hexagonal ones, since they do not suffer from the electric field normal to the QW plane due either to spontaneous or piezoelectric polarization. Both MQWs exhibited a large and composition-dependent bandgap bowing, and time-resolved PL (TR-PL) signals showed a stretched-exponential decay even at room temperature. The exciton localization is considered to be an intrinsic property of InGaN.",

author = "Chichibu, {S. F.} and M. Sugiyama and T. Onuma and T. Kuroda and A. Tackeuchi and T. Sota and T. Kitamura and H. Nakanishi and Y. Ishida and H. Okumura and S. Keller and Mishra, {U. K.} and DenBaars, {S. P.} and S. Nakamura",

year = "2002",

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language = "English",

volume = "693",

pages = "481--486",

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T1 - Similarities in the optical properties of hexagonal and cubic InGaN quantum wells

AU - Chichibu, S. F.

AU - Sugiyama, M.

AU - Onuma, T.

AU - Kuroda, T.

AU - Tackeuchi, A.

AU - Sota, T.

AU - Kitamura, T.

AU - Nakanishi, H.

AU - Ishida, Y.

AU - Okumura, H.

AU - Keller, S.

AU - Mishra, U. K.

AU - DenBaars, S. P.

AU - Nakamura, S.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Optical properties of fully-strained wurtzite and zincblende InxGa1-xN/GaN multiple quantum well (MQW) structures were compared to discuss the origin of exciton localization. In contrast to the hexagonal InGaN MQWs, the photoluminescence (PL) peak energy of cubic InGaN MQWs showed a moderate blueshift with decreasing well thickness, L, and low-temperature PL decay time of the cubic MQWs did not depend strongly on L. The results imply that the wavefunction overlap in cubic InGaN MQWs was not reduced compared to the hexagonal ones, since they do not suffer from the electric field normal to the QW plane due either to spontaneous or piezoelectric polarization. Both MQWs exhibited a large and composition-dependent bandgap bowing, and time-resolved PL (TR-PL) signals showed a stretched-exponential decay even at room temperature. The exciton localization is considered to be an intrinsic property of InGaN.

AB - Optical properties of fully-strained wurtzite and zincblende InxGa1-xN/GaN multiple quantum well (MQW) structures were compared to discuss the origin of exciton localization. In contrast to the hexagonal InGaN MQWs, the photoluminescence (PL) peak energy of cubic InGaN MQWs showed a moderate blueshift with decreasing well thickness, L, and low-temperature PL decay time of the cubic MQWs did not depend strongly on L. The results imply that the wavefunction overlap in cubic InGaN MQWs was not reduced compared to the hexagonal ones, since they do not suffer from the electric field normal to the QW plane due either to spontaneous or piezoelectric polarization. Both MQWs exhibited a large and composition-dependent bandgap bowing, and time-resolved PL (TR-PL) signals showed a stretched-exponential decay even at room temperature. The exciton localization is considered to be an intrinsic property of InGaN.

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Similarities in the optical properties of hexagonal and cubic InGaN quantum wells

Abstract

ASJC Scopus subject areas

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