Simple and engineered process yielding carbon nanotube arrays with 1.2 × 1013 cm-2 wall density on conductive underlayer at 400 °c

Nuri Na, Dong Young Kim, Yeong Gi So, Yuichi Ikuhara, Suguru Noda

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


A simple process is presented that realizes carbon nanotube (CNT) arrays that meet the process and structure requirements for use in large-scale integrated circuits. Ni particles are formed densely on a conductive TiN layer on SiO2/Si substrates through nucleation and growth by sputtering, which was stopped prior to percolation of the Ni particles. Ni particles as dense as 2.8 × 1012 cm-2 were formed after annealing at 400 °C and chemical vapor deposition (CVD) was carried out at 400 °C by feeding C2H2 at partial pressures as low as 0.13-1.3 Pa so as not to kill the catalyst. Scanning electron microscopy with energy dispersive X-ray spectroscopy revealed the mass density of the arrays to be as high as 1.1 g cm-3. High resolution transmission electron microscopy showed the densely packed CNTs with an average wall number of eight. Atomic force microscopy of the root of the CNT arrays transferred to a SiO2/Si substrate enabled direct counting of individual CNTs, revealing areal densities of CNTs and CNT walls as high as 1.5 × 1012 and 1.2 × 1013 cm-2, respectively. The simple process, using conventional sputtering and CVD apparatus, with carefully engineered conditions offers a route for practical application of CNTs.

Original languageEnglish
Pages (from-to)773-781
Number of pages9
Issue number1
Publication statusPublished - 2015

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)


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