Simple and Rapid Fabrication Process of Porous Silicon Surface Using Inductively Coupled Plasma Reactive Ion Etching

T. Sugaya, D. H. Yoon, H. Yamazaki, K. Nakanishi, T. Sekiguchi, S. Shoji

Research output: Contribution to journalArticle

Abstract

In this study, the simple and rapid formation of porous silicon on a pillar array structure using inductively coupled plasma reactive ion etching (ICP-RIE) is realized. This method can render the outermost surface porous without using an additional etching or deposition apparatus because the same equipment is used to form the structure. As a basic experiment, we attempted to etch the structure by considerably varying three parameters (bias power, chamber pressure, and gas flow rate) in ICP-RIE. The etching step condition was determined for the porous structure from the result. Furthermore, we obtained a porous pillar surface while almost maintaining the structure by performing multicycle etching and an additional passivation step. A number of pores (diameter: 100 nm) were formed randomly on the side wall of the pillar array using the proposed method. Compared with original pillar, the surface roughness of porous pillar increased by 48%. [2019-0216].

Original languageEnglish
Article number8910376
Pages (from-to)62-67
Number of pages6
JournalJournal of Microelectromechanical Systems
Volume29
Issue number1
DOIs
Publication statusPublished - 2020 Feb

Keywords

  • Etching
  • microstructure
  • nanoporous materials
  • silicon

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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