Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

K. Shih, M. Nimura, Y. Kanehira, T. Ogashiwa, Jun Mizuno, Shuichi Shoji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We developed a novel through silicon via (TSV) fabrication process using dry filling of sub-micron Au particle for stack type 3D MEMS. X-ray image shows that the slurry including Au particles was uniformly filled into vias with squeegee under low pressure in short time. TSV with a diameter of 30 μm and depth of 70μm were successfully fabricated. The resistance of single TSV was 0.11 Ω. The dielectric withstanding voltage of SiO2 insulating layer was about 150 V. The result indicates that high through put fabrication of TSV for 3D MEMS can be realized with a simple method.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Pages299-302
Number of pages4
DOIs
Publication statusPublished - 2013
EventIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 - Taipei
Duration: 2013 Jan 202013 Jan 24

Other

OtherIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
CityTaipei
Period13/1/2013/1/24

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Shih, K., Nimura, M., Kanehira, Y., Ogashiwa, T., Mizuno, J., & Shoji, S. (2013). Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS. In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) (pp. 299-302). [6474237] https://doi.org/10.1109/MEMSYS.2013.6474237